TIM3742-8UL

www.DataSheet4U.com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES TIM3742-8UL „ HIGH POWER P1dB=39.5dBm at 3.7GHz to 4.2GHz „ HIGH GAIN G1dB=11.0dB at 3.7GHz to 4.2GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 ∆Tch IDS1 ∆G G1dB VDS= 10V dB A dB % Two Tone Test Po= 28.5dBm (Single Carrier Level) SYMBOL P1dB CONDITION UNIT MIN. TYP. MAX. dBm 38.5 10.0    -44   39.5 11.0 2.2  37 -47 2.2    2.6 ±0.6   2.6 80 f = 3.7 – 4.2GHz ηadd IM3 dBc A °C VDS X IDS X Rth(c-c) ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO CONDITION VDS= 3V IDS= 3.0A VDS= 3V IDS= 30mA VDS= 3V VGS= 0V IGS= -100µA UNIT MIN. TYP. MAX. mS  1800  V A V °C/W -1.0  -5  -2.5 5.2  2.5 -4.0 7.0  3.5 Rth(c-c) Channel to Case ‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or paten...