MICROWAVE POWER GaAs FET
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MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
FEATURES
TIM3742-8UL
HIGH POWE...
Description
www.DataSheet4U.com
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
FEATURES
TIM3742-8UL
HIGH POWER P1dB=39.5dBm at 3.7GHz to 4.2GHz HIGH GAIN G1dB=11.0dB at 3.7GHz to 4.2GHz
BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 ∆Tch IDS1 ∆G G1dB VDS= 10V dB A dB % Two Tone Test Po= 28.5dBm
(Single Carrier Level)
SYMBOL P1dB
CONDITION
UNIT MIN. TYP. MAX. dBm 38.5 10.0 -44 39.5 11.0 2.2 37 -47 2.2 2.6 ±0.6 2.6 80
f = 3.7 – 4.2GHz
ηadd
IM3
dBc A °C
VDS X IDS X Rth(c-c)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL
gm
VGSoff IDSS VGSO
CONDITION VDS= 3V IDS= 3.0A VDS= 3V IDS= 30mA VDS= 3V VGS= 0V IGS= -100µA
UNIT MIN. TYP. MAX. mS 1800 V A V °C/W -1.0 -5 -2.5 5.2 2.5 -4.0 7.0 3.5
Rth(c-c) Channel to Case
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