Switching Applications. 5HP02N Datasheet

5HP02N Applications. Datasheet pdf. Equivalent


Sanyo Semicon Device 5HP02N
Ordering number:ENN6530
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· 4V drive.
P-Channel Silicon MOSFET
5HP02N
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2178
[5HP02N]
5.0
4.0 4.0
0.45
0.5
0.45 0.44
123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
PW10µs, duty cycle1%
1.3
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : XF
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
ID=–1mA, VGS=0
VDS=–50V, VGS=0
VGS=±16V, VDS=0
VDS=–10V, ID=–100µA
VDS=–10V, ID=–70mA
ID=–70mA, VGS=–10V
ID=–40mA, VGS=–4V
1.3
1 : Source
2 : Drain
3 : Gate
SANYO : NP
Ratings
–50
±20
–0.14
–0.56
0.4
150
–55 to +150
Unit
V
V
A
A
W
˚C
˚C
Ratings
min typ max
Unit
–50 V
–10 µA
±10 µA
–1 –2.5 V
0.12 0.16
S
4.7 6.1
6.5 9.1
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2000TS (KOTO) TA-2936 No.6530-1/4


5HP02N Datasheet
Recommendation 5HP02N Datasheet
Part 5HP02N
Description Ultrahigh-Speed Switching Applications
Feature 5HP02N; Ordering number:ENN6530 P-Channel Silicon MOSFET 5HP02N Ultrahigh-Speed Switching Applications Fea.
Manufacture Sanyo Semicon Device
Datasheet
Download 5HP02N Datasheet




Sanyo Semicon Device 5HP02N
5HP02N
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
Symbol
Conditions
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=–10V, VGS=–10V, ID=–140mA
VDS=–10V, VGS=–10V, ID=–140mA
VDS=–10V, VGS=–10V, ID=–140mA
IS=–140mA, VGS=0
Switching Time Test Circuit
0V VIN
--10V
VIN
PW=10µs
D.C.1%
VDD=--25V
ID=--70mA
RL=357
D VOUT
G
5HP02N
P.G 50S
Ratings
min typ max
Unit
23 pF
11 pF
4 pF
13 ns
10 ns
190 ns
95 ns
1.68
nC
0.22
nC
0.43
nC
–0.83 –1.2 V
--0.14
--0.12 --8.0V
ID -- VDS
--0.10
--0.08
--0.06
--3.0V
--0.04
--0.02
VGS= --2.5V
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
Drain-to-Source Voltage, VDS – V IT00262
RDS(on) -- VGS
10
Ta=25°C
9
8 --40mA ID= --70mA
7
6
5
4
--2 --3 --4 --5 --6 --7 --8 --9 --10
Gate-to-Source Voltage, VGS – V IT00264
--0.30
--0.25
--0.20
--0.15
--0.10
--0.05
0
0
10
7
5
3
2
ID -- VGS
VDS= --10V
--1 --2 --3 --4 --5 --6
Gate-to-Source Voltage, VGS – V IT00263
RDS(on) -- ID
VGS= --10V
Ta=75°C
25°C
--25°C
1.0
--0.01
23
5 7 --0.1
23
5
Drain Current, ID – A
IT00265
No.6530-2/4



Sanyo Semicon Device 5HP02N
5HP02N
100 RDS(on) -- ID
7 VGS= --4V
RDS(on) -- Ta
12
5
3
2
25°C
10 Ta=75°C
7
10
8
6
I D=ID--=40--m70Am, VA,GVS=G-S-4=V--10V
5
--25°C
4
3
22
1.0
--0.01
1.0
7
5
3
2
0.1
7
5
3
2
23
5 7 --0.1
23
5
Drain Current, ID – A
IT00266
yfs-- ID
VDS= --10V
Ta=
--25°C
75°C
25°C
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – ˚C
IT00267
IF -- VSD
--1.0
VGS=0
7
5
3
2
--0.1
7
5
3
2
0.01
--0.01
1000
7
5
3
2
23
5 7 --0.1
23
5
Drain Current, ID – A
IT00268
SW Time -- ID
VDD= --25V
VGS= --10V
td(off)
100 tf
7
5
3 tr
2
10
7
5
3
2
1.0
--0.01
2
--10
VDS= --10V
--9 ID= --140mA
3 5 7 --0.1
Drain Current, ID – A
VGS -- Qg
--8
td(on)
23
IT00270
--7
--6
--5
--4
--3
--2
--1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Total Gate Charge, Qg – nC
IT00272
--0.01
--0.2
100
7
5
3
2
--0.4
--0.6
--0.8
--1.0
Diode Forward Voltage, VSD – V
Ciss, Coss, Crss -- VDS
--1.2
IT00269
f=1MHz
Ciss
10
Coss
7
5
3 Crss
2
1.0
0
0.5
--5 --10 --15 --20 --25 --30 --35 --40 --45 --50
Drain-to-Source Voltage, VDS – V IT00271
PD -- Ta
0.4
0.3
0.2
0.1
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – ˚C
IT01995
No.6530-3/4







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