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5HP02N Datasheet, Equivalent, Switching Applications.Ultrahigh-Speed Switching Applications Ultrahigh-Speed Switching Applications |
| Part | 5HP02N |
|---|---|
| Description | Ultrahigh-Speed Switching Applications |
| Feature | Ordering number:ENN6530
P-Channel Silic on MOSFET
5HP02N
Ultrahigh-Speed Switc hing Applications
Features
· Low ON-re sistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit: mm 2178 [5HP02N] 5. 0 4. 0 4. 0 0. 45 0. 5 0. 6 2. 0 5. 0 0. 45 0. 44 1 2 3 14. 0 Specifications Absolute Maximum Rati ngs at Ta = 25˚C Parameter Drain-to-So urce Voltage Gate-to-Source Voltage Dra in Current (DC) Drain Current (pulse) A llowable Power Dissipation Channel Temp erature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, du ty cycle≤1% Conditions 1. 3 1. 3 1 : Source 2 : Drain 3 : G . |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
| Part | 5HP02N |
|---|---|
| Description | Ultrahigh-Speed Switching Applications |
| Feature | Ordering number:ENN6530
P-Channel Silic on MOSFET
5HP02N
Ultrahigh-Speed Switc hing Applications
Features
· Low ON-re sistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit: mm 2178 [5HP02N] 5. 0 4. 0 4. 0 0. 45 0. 5 0. 6 2. 0 5. 0 0. 45 0. 44 1 2 3 14. 0 Specifications Absolute Maximum Rati ngs at Ta = 25˚C Parameter Drain-to-So urce Voltage Gate-to-Source Voltage Dra in Current (DC) Drain Current (pulse) A llowable Power Dissipation Channel Temp erature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, du ty cycle≤1% Conditions 1. 3 1. 3 1 : Source 2 : Drain 3 : G . |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
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