Ultrahigh-Speed Switching Applications
Ordering number : ENN6555
5LN01C
N-Channel Silicon MOSFET
5LN01C
Ultrahigh-Speed Switching Applications
Features
• • •...
Description
Ordering number : ENN6555
5LN01C
N-Channel Silicon MOSFET
5LN01C
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
unit : mm 2091A
[5LN01C]
0.5
Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.
0.4
0.16 0 to 0.1
3
1 0.95 0.95 2 1.9 2.9
0.5
1.5 2.5
0.8 1.1
1 : Gate 2 : Source 3 : Drain SANYO : CP
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
Ratings 50 ±10 0.1 0.4 0.25 150 --55 to +150
Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Sourse on-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=1mA, VGS=0 VDS=50V, VGS=0 VGS=± 8V, VDS=0 VDS=10V, ID=100µA VDS=10V, ID=50mA ID=50mA, VGS=4V ID=30mA, VGS=2.5V ID=10mA, VGS=1.5V Ratings min 50 10 ±10 0.4 0.13 0.18 6 7.1 10 7.8 9.9 20 1.3 typ max Unit V µA µA V S Ω Ω Ω
Marking : YB
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other...
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