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5LN01C Datasheet, Equivalent, Switching Applications.Ultrahigh-Speed Switching Applications Ultrahigh-Speed Switching Applications |
| Part | 5LN01C |
|---|---|
| Description | Ultrahigh-Speed Switching Applications |
| Feature | Ordering number : ENN6555
5LN01C
N-Chan nel Silicon MOSFET
5LN01C
Ultrahigh-Sp eed Switching Applications
Features
• • • Package Dimensions unit : mm 2091A [5LN01C] 0. 5 Low ON-resistance. Ultrahigh-speed switching. 2. 5V drive. 0. 4 0. 16 0 to 0. 1 3 1 0. 95 0. 95 2 1 . 9 2. 9 0. 5 1. 5 2. 5 0. 8 1. 1 1 : Gate 2 : Source 3 : Drain SANYO : CP Speci fications Absolute Maximum Ratings at T a=25°C Parameter Drain-to-Source Volta ge Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable P ower Dissipation Channel Temperature St orage Temperature Symbol VDSS VGSS ID I DP PD Tch Tstg PW≤10µ . |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
| Part | 5LN01C |
|---|---|
| Description | Ultrahigh-Speed Switching Applications |
| Feature | Ordering number : ENN6555
5LN01C
N-Chan nel Silicon MOSFET
5LN01C
Ultrahigh-Sp eed Switching Applications
Features
• • • Package Dimensions unit : mm 2091A [5LN01C] 0. 5 Low ON-resistance. Ultrahigh-speed switching. 2. 5V drive. 0. 4 0. 16 0 to 0. 1 3 1 0. 95 0. 95 2 1 . 9 2. 9 0. 5 1. 5 2. 5 0. 8 1. 1 1 : Gate 2 : Source 3 : Drain SANYO : CP Speci fications Absolute Maximum Ratings at T a=25°C Parameter Drain-to-Source Volta ge Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable P ower Dissipation Channel Temperature St orage Temperature Symbol VDSS VGSS ID I DP PD Tch Tstg PW≤10µ . |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
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