| DatasheetsPDF.com |
5LN01M Datasheet, Equivalent, Switching Applications.Ultrahigh-Speed Switching Applications Ultrahigh-Speed Switching Applications |
　
　
　
| Part | 5LN01M |
|---|---|
| Description | Ultrahigh-Speed Switching Applications |
| Feature | Ordering number:ENN6137
N-Channel Silic on MOSFET
5LN01M
Ultrahigh-Speed Switc hing Applications
Features
· Low ON re sistance. · Ultrahigh-speed switching. · 2. 5V drive. Package Dimensions uni t:mm 2158 [5LN01M] 0. 425 0. 15 3 2. 1 1 . 250 0 to 0. 1 0. 425 1 2 0. 65 0. 65 2. 0 0. 3 0. 9 0. 6 0. 2 0. 3 Specificatio ns Absolute Maximum Ratings at Ta = 25Ë šC Parameter Drain-to-Source Voltage Ga te-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% C onditions 1 : Gate 2 : . |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
| Part | 5LN01M |
|---|---|
| Description | Ultrahigh-Speed Switching Applications |
| Feature | Ordering number:ENN6137
N-Channel Silic on MOSFET
5LN01M
Ultrahigh-Speed Switc hing Applications
Features
· Low ON re sistance. · Ultrahigh-speed switching. · 2. 5V drive. Package Dimensions uni t:mm 2158 [5LN01M] 0. 425 0. 15 3 2. 1 1 . 250 0 to 0. 1 0. 425 1 2 0. 65 0. 65 2. 0 0. 3 0. 9 0. 6 0. 2 0. 3 Specificatio ns Absolute Maximum Ratings at Ta = 25Ë šC Parameter Drain-to-Source Voltage Ga te-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% C onditions 1 : Gate 2 : . |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
　
　
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |