Ultrahigh-Speed Switching Applications
Ordering number : ENN6558
5LN01N
N-Channel Silicon MOSFET
5LN01N
Ultrahigh-Speed Switching Applications
Features
• • •...
Description
Ordering number : ENN6558
5LN01N
N-Channel Silicon MOSFET
5LN01N
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
unit : mm 2178
5.0 4.0
Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.
[5LN01N]
4.0
0.45 0.5
0.6 2.0
5.0
0.45
0.44
14.0
1
2
3
1 : Source 2 : Drain 3 : Gate
1.3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
1.3
SANYO : NP
Ratings 50 ±10 0.1 0.4 0.4 150 --55 to +150 Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=1mA, VGS=0 VDS=50V, VGS=0 VGS=± 8V, VDS=0 VDS=10V, ID=100µA VDS=10V, ID=50mA Ratings min 50 10 ±10 0.4 0.13 0.18 1.3 typ max Unit V µA µA V S
Marking : YB
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative near...
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