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5LN01N Datasheet, Equivalent, Switching Applications.

Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications

 

 

 

Part 5LN01N
Description Ultrahigh-Speed Switching Applications
Feature Ordering number : ENN6558 5LN01N N-Chan nel Silicon MOSFET 5LN01N Ultrahigh-Sp eed Switching Applications Features


• Package Dimensions unit : mm 2178 5.
0 4.
0 Low ON-resistance.
Ultrah igh-speed switching.
2.
5V drive.
[5LN0 1N] 4.
0 0.
45 0.
5 0.
6 2.
0 5.
0 0.
45 0 .
44 14.
0 1 2 3 1 : Source 2 : Drai n 3 : Gate 1.
3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Curren t (Pulse) Allowable Power Dissipation C hannel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW 10µs, duty cycle≤1% C .
Manufacture Sanyo Semicon Device
Datasheet
Download 5LN01N Datasheet
Part 5LN01N
Description Ultrahigh-Speed Switching Applications
Feature Ordering number : ENN6558 5LN01N N-Chan nel Silicon MOSFET 5LN01N Ultrahigh-Sp eed Switching Applications Features


• Package Dimensions unit : mm 2178 5.
0 4.
0 Low ON-resistance.
Ultrah igh-speed switching.
2.
5V drive.
[5LN0 1N] 4.
0 0.
45 0.
5 0.
6 2.
0 5.
0 0.
45 0 .
44 14.
0 1 2 3 1 : Source 2 : Drai n 3 : Gate 1.
3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Curren t (Pulse) Allowable Power Dissipation C hannel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW 10µs, duty cycle≤1% C .
Manufacture Sanyo Semicon Device
Datasheet
Download 5LN01N Datasheet

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