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5LN01N Datasheet, Equivalent, Switching Applications.Ultrahigh-Speed Switching Applications Ultrahigh-Speed Switching Applications |
　
　
　
| Part | 5LN01N |
|---|---|
| Description | Ultrahigh-Speed Switching Applications |
| Feature | Ordering number : ENN6558
5LN01N
N-Chan nel Silicon MOSFET
5LN01N
Ultrahigh-Sp eed Switching Applications
Features
• • • Package Dimensions unit : mm 2178 5. 0 4. 0 Low ON-resistance. Ultrah igh-speed switching. 2. 5V drive. [5LN0 1N] 4. 0 0. 45 0. 5 0. 6 2. 0 5. 0 0. 45 0 . 44 14. 0 1 2 3 1 : Source 2 : Drai n 3 : Gate 1. 3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Curren t (Pulse) Allowable Power Dissipation C hannel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PWâ ‰¤10µs, duty cycle≤1% C . |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
| Part | 5LN01N |
|---|---|
| Description | Ultrahigh-Speed Switching Applications |
| Feature | Ordering number : ENN6558
5LN01N
N-Chan nel Silicon MOSFET
5LN01N
Ultrahigh-Sp eed Switching Applications
Features
• • • Package Dimensions unit : mm 2178 5. 0 4. 0 Low ON-resistance. Ultrah igh-speed switching. 2. 5V drive. [5LN0 1N] 4. 0 0. 45 0. 5 0. 6 2. 0 5. 0 0. 45 0 . 44 14. 0 1 2 3 1 : Source 2 : Drai n 3 : Gate 1. 3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Curren t (Pulse) Allowable Power Dissipation C hannel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PWâ ‰¤10µs, duty cycle≤1% C . |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
　
　
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