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5LN01SP Datasheet, Equivalent, Switching Applications.Ultrahigh-Speed Switching Applications Ultrahigh-Speed Switching Applications |
　
　
　
| Part | 5LN01SP |
|---|---|
| Description | Ultrahigh-Speed Switching Applications |
| Feature | Ordering number : ENN6559
5LN01SP
N-Cha nnel Silicon MOSFET
5LN01SP
Ultrahigh- Speed Switching Applications
Features
â €¢ • • Package Dimensions unit : m m 2180 [5LN01SP] 4. 0 3. 0 Low ON-resist ance. Ultrahigh-speed switching. 2. 5V d rive. 2. 2 0. 4 0. 5 0. 6 1. 8 15. 0 0. 4 0. 4 1 2 1. 3 0. 7 3 1. 3 0. 7 Specifica tions Absolute Maximum Ratings at Ta=25 °C Parameter Drain-to-Source Voltage G ate-to-Source Voltage Drain Current (DC ) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storag e Temperature Symbol VDSS VGSS ID IDP P D Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1 : Source 2 : . |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
| Part | 5LN01SP |
|---|---|
| Description | Ultrahigh-Speed Switching Applications |
| Feature | Ordering number : ENN6559
5LN01SP
N-Cha nnel Silicon MOSFET
5LN01SP
Ultrahigh- Speed Switching Applications
Features
â €¢ • • Package Dimensions unit : m m 2180 [5LN01SP] 4. 0 3. 0 Low ON-resist ance. Ultrahigh-speed switching. 2. 5V d rive. 2. 2 0. 4 0. 5 0. 6 1. 8 15. 0 0. 4 0. 4 1 2 1. 3 0. 7 3 1. 3 0. 7 Specifica tions Absolute Maximum Ratings at Ta=25 °C Parameter Drain-to-Source Voltage G ate-to-Source Voltage Drain Current (DC ) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storag e Temperature Symbol VDSS VGSS ID IDP P D Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1 : Source 2 : . |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
　
　
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