| DatasheetsPDF.com |
5LN01SS Datasheet, Equivalent, Switching Applications.Ultrahigh-Speed Switching Applications Ultrahigh-Speed Switching Applications |
　
　
　
| Part | 5LN01SS |
|---|---|
| Description | Ultrahigh-Speed Switching Applications |
| Feature | Ordering number : ENN6560
5LN01SS
N-Cha nnel Silicon MOSFET
5LN01SS
Ultrahigh- Speed Switching Applications
Features
â €¢ • • Package Dimensions unit : m m 2179 [5LN01SS] 1. 4 Low ON-resistance . Ultrahigh-speed switching. 2. 5V drive . 0. 3 0. 25 0. 1 3 0. 8 0. 2 0. 3 1 0. 45 2 1. 4 1 : Gate 2 : Source 3 : Dra in 0. 6 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to -Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse ) Allowable Power Dissipation Channel T emperature Storage Temperature Symbol V DSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Condition . |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
| Part | 5LN01SS |
|---|---|
| Description | Ultrahigh-Speed Switching Applications |
| Feature | Ordering number : ENN6560
5LN01SS
N-Cha nnel Silicon MOSFET
5LN01SS
Ultrahigh- Speed Switching Applications
Features
â €¢ • • Package Dimensions unit : m m 2179 [5LN01SS] 1. 4 Low ON-resistance . Ultrahigh-speed switching. 2. 5V drive . 0. 3 0. 25 0. 1 3 0. 8 0. 2 0. 3 1 0. 45 2 1. 4 1 : Gate 2 : Source 3 : Dra in 0. 6 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to -Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse ) Allowable Power Dissipation Channel T emperature Storage Temperature Symbol V DSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Condition . |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
　
　
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |