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5LN01SS Datasheet, Equivalent, Switching Applications.

Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications

 

 

 

Part 5LN01SS
Description Ultrahigh-Speed Switching Applications
Feature Ordering number : ENN6560 5LN01SS N-Cha nnel Silicon MOSFET 5LN01SS Ultrahigh- Speed Switching Applications Features

• Package Dimensions unit : m m 2179 [5LN01SS] 1.
4 Low ON-resistance .
Ultrahigh-speed switching.
2.
5V drive .
0.
3 0.
25 0.
1 3 0.
8 0.
2 0.
3 1 0.
45 2 1.
4 1 : Gate 2 : Source 3 : Dra in 0.
6 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to -Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse ) Allowable Power Dissipation Channel T emperature Storage Temperature Symbol V DSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Condition .
Manufacture Sanyo Semicon Device
Datasheet
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Part 5LN01SS
Description Ultrahigh-Speed Switching Applications
Feature Ordering number : ENN6560 5LN01SS N-Cha nnel Silicon MOSFET 5LN01SS Ultrahigh- Speed Switching Applications Features

• Package Dimensions unit : m m 2179 [5LN01SS] 1.
4 Low ON-resistance .
Ultrahigh-speed switching.
2.
5V drive .
0.
3 0.
25 0.
1 3 0.
8 0.
2 0.
3 1 0.
45 2 1.
4 1 : Gate 2 : Source 3 : Dra in 0.
6 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to -Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse ) Allowable Power Dissipation Channel T emperature Storage Temperature Symbol V DSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Condition .
Manufacture Sanyo Semicon Device
Datasheet
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5LN01SS

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