AT49BV320DT

www.DataSheet4U.com Features Single Voltage Read/Write Operation: 2.65V to 3.6V Access Time – 70 ns Sector Erase Architecture – Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time – 10 µs Fast Sector Erase Time – 100 ms Suspend/Resume Feature for Erase and Program – Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector – Supports Reading Any Word by Suspending Programming of Any Other Word Low-power Operation – 10 mA Active – 15 µA Standby VPP Pin for Write Protection and Accelerated Program Operation WP Pin for Sector Protection RESET Input for Device Initialization Flexible Sector Protection TSOP and CBGA Package Options Top or Bottom Boot Block Configuration Available 128-bit Protection Register Minimum 100,000 Erase Cycles Common Flash Interface (CFI) Green (Pb/Halide-free) Packaging 32-megabit (2M x 16) 3-volt Only Flash Memory AT49BV320D AT49BV320DT 1. Description The AT49BV320D(T) is a 2.7-volt 32-megabit Flash memory organized as 2,097,152 words of 16 bits each. The memory is divided into 71 sectors for erase operations. The device is offered in a 48-lead TSOP package and a 47-ball CBGA package. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single power supply, making it ideally suited for in-system programming. The ...