Flash Memory. AT49BV6416 Datasheet

AT49BV6416 Datasheet PDF, Equivalent


Part Number

AT49BV6416

Description

Flash Memory

Manufacture

ATMEL Corporation

Total Page 30 Pages
PDF Download
Download AT49BV6416 Datasheet PDF


AT49BV6416 Datasheet
www.DataSheet4U.com
Features
64-megabit (4M x 16) Flash Memory
2.7V - 3.6V Read/Write
High Performance
– Asynchronous Access Time – 70 ns
– Page Mode Read Time – 20 ns
Sector Erase Architecture
– Eight 4K Word Sectors with Individual Write Lockout
– One Hundred Twenty-seven 32K Word Main Sectors with Individual Write Lockout
Typical Sector Erase Time: 32K Word Sectors – 700 ms; 4K Word Sectors – 200 ms
Four Plane Organization, Permitting Concurrent Read in Any of Three Planes not Being
Programmed/Erased
– Memory Plane A: 16M of Memory Including Eight 4K Word Sectors
– Memory Plane B: 16M of Memory Consisting of 32K Word Sectors
– Memory Plane C: 16M of Memory Consisting of 32K Word Sectors
– Memory Plane D: 16M of Memory Consisting of 32K Word Sectors
Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming Data from Any Sector by Suspending Erase
of a Different Sector
– Supports Reading Any Word by Suspending Programming of Any Other Word
Low-power Operation
– 30 mA Active
– 35 µA Standby
2.2V I/O Option Reduces Overall System Power
Data Polling and Toggle Bit for End of Program Detection
VPP Pin for Write Protection and Accelerated Program Operations
RESET Input for Device Initialization
TSOP Package
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
Common Flash Interface (CFI)
Green (Pb/Halide-free) Packaging Option
64-megabit
(4M x 16)
Page Mode
2.7-volt Flash
Memory
AT49BV6416
AT49BV6416T
1. Description
The AT49BV6416(T) is a 2.7-volt 64-megabit Flash memory. The memory is divided
into multiple sectors and planes for erase operations. The device can be read or
reprogrammed off a single 2.7V power supply, making it ideally suited for in-system
programming. The output voltage can be separately controlled down to 2.2V through
the VCCQ supply pin. The device can operate in the asynchronous or page read
mode.
The AT49BV6416(T) is divided into four memory planes. A read operation can occur
in any of the three planes which is not being programmed or erased. This concurrent
operation allows improved system performance by not requiring the system to wait for
a program or erase operation to complete before a read is performed. To further
increase the flexibility of the device, it contains an Erase Suspend and Program Sus-
pend feature. This feature will put the erase or program on hold for any amount of time
and let the user read data from or program data to any of the remaining sectors. There
is no reason to suspend the erase or program operation if the data to be read is in
another memory plane. The end of program or erase is detected by Data Polling or
toggle bit.
3451C–FLASH–2/05

AT49BV6416 Datasheet
The VPP pin provides data protection and faster programming times. When the VPP input is
below 0.7V, the program and erase functions are inhibited. When VPP is at 1.65V or above, nor-
mal program and erase operations can be performed. With VPP at 10.0V, the program (dual-
word program command) operation is accelerated.
A six-byte command (Enter Single Pulse Program Mode) to remove the requirement of entering
the three-byte program sequence is offered to further improve programming time. After entering
the six-byte code, only single pulses on the write control lines are required for writing into the
device. This mode (Single Pulse Word Program) is exited by powering down the device, by tak-
ing the RESET pin to GND or by a high-to-low transition on the VPP input. Erase, Erase
Suspend/Resume, Program Suspend/Resume and Read Reset commands will not work while in
this mode; if entered they will result in data being programmed into the device. It is not recom-
mended that the six-byte code reside in the software of the final product but only exist in external
programming code.
2. Pin Configurations
Pin Name
I/O0 - I/O15
A0 - A21
CE
OE
WE
RESET
WP
VPP
VCCQ
2.1 TSOP Top View (Type 1)
Pin Function
Data Inputs/Outputs
Addresses
Chip Enable
Output Enable
Write Enable
Reset
Write Protect
Write Protection and Power Supply for Accelerated Program
Operations
Output Power Supply
A15
A14
A13
A12
A11
A10
A9
A8
A21
A20
WE
RESET
VPP
WP
A19
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48 A16
47 VCCQ
46 GND
45 I/O15
44 I/O7
43 I/O14
42 I/O6
41 I/O13
40 I/O5
39 I/O12
38 I/O4
37 VCC
36 I/O11
35 I/O3
34 I/O10
33 I/O2
32 I/O9
31 I/O1
30 I/O8
29 I/O0
28 OE
27 GND
26 CE
25 A0
2 AT49BV6416(T)
3451C–FLASH–2/05


Features Datasheet pdf www.DataSheet4U.com Features • 64-meg abit (4M x 16) Flash Memory • 2.7V - 3.6V Read/Write • High Performance Asynchronous Access Time – 70 ns Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Se ctors with Individual Write Lockout – One Hundred Twenty-seven 32K Word Main Sectors with Individual Write Lockout Typical Sector Erase Time: 32K Word Sec tors – 700 ms; 4K Word Sectors – 20 0 ms Four Plane Organization, Permittin g Concurrent Read in Any of Three Plane s not Being Programmed/Erased – Memor y Plane A: 16M of Memory Including Eigh t 4K Word Sectors – Memory Plane B: 1 6M of Memory Consisting of 32K Word Sec tors – Memory Plane C: 16M of Memory Consisting of 32K Word Sectors – Memo ry Plane D: 16M of Memory Consisting of 32K Word Sectors Suspend/Resume Featur e for Erase and Program – Supports Re ading and Programming Data from Any Sec tor by Suspending Erase of a Different Sector – Supports Reading Any Word by Suspending Programming of Any Other Word Low-power Operat.
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