AT49BV6416T

www.DataSheet4U.com Features 64-megabit (4M x 16) Flash Memory 2.7V - 3.6V Read/Write High Performance – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout – One Hundred Twenty-seven 32K Word Main Sectors with Individual Write Lockout Typical Sector Erase Time: 32K Word Sectors – 700 ms; 4K Word Sectors – 200 ms Four Plane Organization, Permitting Concurrent Read in Any of Three Planes not Being Programmed/Erased – Memory Plane A: 16M of Memory Including Eight 4K Word Sectors – Memory Plane B: 16M of Memory Consisting of 32K Word Sectors – Memory Plane C: 16M of Memory Consisting of 32K Word Sectors – Memory Plane D: 16M of Memory Consisting of 32K Word Sectors Suspend/Resume Feature for Erase and Program – Supports Reading and Programming Data from Any Sector by Suspending Erase of a Different Sector – Supports Reading Any Word by Suspending Programming of Any Other Word Low-power Operation – 30 mA Active – 35 µA Standby 2.2V I/O Option Reduces Overall System Power Data Polling and Toggle Bit for End of Program Detection VPP Pin for Write Protection and Accelerated Program Operations RESET Input for Device Initialization TSOP Package Top or Bottom Boot Block Configuration Available 128-bit Protection Register Common Flash Interface (CFI) Green (Pb/Halide-free) Packaging Option 64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory AT49BV6416 AT49BV6416T ...