AT49BV6416CT Memory Datasheet

AT49BV6416CT Datasheet PDF, Equivalent


Part Number

AT49BV6416CT

Description

Flash Memory

Manufacture

ATMEL Corporation

Total Page 30 Pages
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AT49BV6416CT
www.DataSheet4U.com
Features
64-megabit (4M x 16) Flash Memory
2.7V - 3.6V Read/Write
High Performance
– Asynchronous Access Time – 70 ns
– Page Mode Read Time – 20 ns
Sector Erase Architecture
– Eight 4K Word Sectors with Individual Write Lockout
– One Hundred Twenty-seven 32K Word Main Sectors with Individual Write Lockout
Typical Sector Erase Time: 32K Word Sectors – 700 ms; 4K Word Sectors – 200 ms
Four Plane Organization, Permitting Concurrent Read in Any of the Three Planes not
Being Programmed/Erased
– Memory Plane A: 16M Memory Including Eight 4K Word Sectors
– Memory Plane B: 16M Memory Consisting of 32K Word Sectors
– Memory Plane C: 16M Memory Consisting of 32K Word Sectors
– Memory Plane D: 16M Memory Consisting of 32K Word Sectors
Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming Data from Any Sector by Suspending Erase
of a Different Sector
– Supports Reading Any Word by Suspending Programming of Any Other Word
Low-power Operation
– 30 mA Active
– 35 µA Standby
2.2V I/O Option Reduces Overall System Power
VPP Pin for Write Protection and Accelerated Program/Erase Operations
Reset Input for Device Initialization
CBGA Package
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
Common Flash Interface (CFI)
64-megabit
(4M x 16)
Page Mode
2.7-volt Flash
Memory
AT49BV6416C
AT49BV6416CT
1. Description
The AT49BV6416C(T) is a 2.7-volt 64-megabit Flash memory. The memory is divided
into multiple sectors and planes for erase operations. The device can be read or
reprogrammed off a single 2.7V power supply, making it ideally suited for In-System
programming. The device can operate in the asynchronous or page read mode.
The AT49BV6416C(T) is divided into four memory planes. A read operation can occur
in any of the three planes which is not being programmed or erased. This concurrent
operation allows improved system performance by not requiring the system to wait for
a program or erase operation to complete before a read is performed. To further
increase the flexibility of the device, it contains an Erase Suspend and Program Sus-
pend feature. This feature will put the erase or program on hold for any amount of time
and let the user read data from or program data to any of the remaining sectors. There
is no reason to suspend the erase or program operation if the data to be read is in
another memory plane.
The VPP pin provides data protection and faster programming times. When the VPP
input is below 0.7V, the program and erase functions are inhibited. When VPP is at
1.65V or above, normal program and erase operations can be performed. With VPP at
10.0V, the program (Dual-word Program command) operation is accelerated.
3465C–FLASH–07/05

AT49BV6416CT
2. Pin Configurations
Pin Name
I/O0 - I/O15
A0 - A21
CE
OE
WE
Reset
WP
VPP
VCCQ
2.1 48-ball CBGA – Top View
Pin Function
Data Inputs/Outputs
Addresses
Chip Enable
Output Enable
Write Enable
Reset
Write Protect
Write Protection and Power Supply for Accelerated Program/Erase Operations
Output Power Supply
1 2 3 4 5 6 78
A
A13 A11 A8 VPP WP A19 A7 A4
B
A14 A10 WE RST A18 A17 A5 A2
C
A15 A12 A9 A21 A20 A6 A3 A1
D
A16 I/O14 I/O5 I/O11 I/O2 I/O8 CE A0
E
VCCQ I/O15 I/O6 I/O12 I/O3 I/O9 I/O0 GND
F
GND I/O7 I/O13 I/O4 VCC I/O10 I/O1 OE
2 AT49BV6416C(T)
3465C–FLASH–07/05


Features www.DataSheet4U.com Features • 64-meg abit (4M x 16) Flash Memory • 2.7V - 3.6V Read/Write • High Performance Asynchronous Access Time – 70 ns Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Se ctors with Individual Write Lockout – One Hundred Twenty-seven 32K Word Main Sectors with Individual Write Lockout Typical Sector Erase Time: 32K Word Sec tors – 700 ms; 4K Word Sectors – 20 0 ms Four Plane Organization, Permittin g Concurrent Read in Any of the Three P lanes not Being Programmed/Erased – M emory Plane A: 16M Memory Including Eig ht 4K Word Sectors – Memory Plane B: 16M Memory Consisting of 32K Word Secto rs – Memory Plane C: 16M Memory Consi sting of 32K Word Sectors – Memory Pl ane D: 16M Memory Consisting of 32K Wor d Sectors Suspend/Resume Feature for Er ase and Program – Supports Reading an d Programming Data from Any Sector by S uspending Erase of a Different Sector Supports Reading Any Word by Suspending Programming of Any Other Word Low-power Operation – 30.
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