IRF7324D1

www.DataSheet4U.com PD- 91789 PRELIMINARY Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Technology SO-8 Footprint IRF7324D1 8 FETKY™ MOSFET / Schottky Diode l l l l A A S G 1 K K D D 2 7 VDSS = -20V RDS(on) = 0.18Ω Schottky Vf = 0.39V 3 6 4 5 T op V ie w Description The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. S O -8 Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Parameter ID @ TA = 25°C ID @ TA = 70°C I DM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS@4.5V Pulsed Drain Current Œ Power Dissipation  Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt  Junction and Storage Temperature Range Maximum -2.9 -2.3 -23 2.0 1.3 16 ± 12 -5.0 -55 to +150 Units A W mW/°C V V/ns °C Thermal Resistance Ratings Parameter RθJA Junction-to-Ambien...