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MRFG35003MT1 Dataheets PDF



Part Number MRFG35003MT1
Manufacturers Motorola
Logo Motorola
Description RF Power Field Effect Transistor
Datasheet MRFG35003MT1 DatasheetMRFG35003MT1 Datasheet (PDF)

www.DataSheet4U.com MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MRFG35003MT1/D The RF GaAs Line Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. • Typical W–CDMA Performance: –42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.

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