MRFG35010

www.DataSheet4U.com Freescale Semiconductor Technical Data MRFG35010 Rev. 6, 12/2004 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications. Typical W−CDMA Performance: −42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power — 1 Watt Power Gain — 10 dB Efficiency — 30% 10 Watts P1dB @ 3.55 GHz Excellent Phase Linearity and Group Delay Characteristics High Gain, High Efficiency and High Linearity MRFG35010 3.5 GHz, 10 W, 12 V POWER FET GaAs PHEMT CASE 360D−02, STYLE 1 NI−360HF Table 1. Maximum Ratings Rating Drain−Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Gate−Source Voltage RF Input Power Storage Temperature Range Channel Temperature(1) Symbol VDSS PD VGS Pin Tstg Tch TC Value 15 28.3 0.19 −5 33 −65 to +175 175 −20 to +90 Unit Vdc W W/°C Vdc dBm °C °C °C Operating Case Temperature Range Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Class A Class AB Symbol RθJC Value 5.3 4.8 Unit °C/W 1. For reliable operation, the operating channel temperature should not exceed 150°C. © Freescale Semiconductor, Inc., 2004. All rights reserved. MRFG35010 5−1 Freescale Semiconductor Wireless RF Product Device Data Table 3. Electrical Characteristics (...