Power MOSFET
www.DataSheet4U.com
PD - 97175A
AUTOMOTIVE MOSFET IRLR3110ZPbF
Features l Advanced Process Technology l Ultra Low On-...
Description
www.DataSheet4U.com
PD - 97175A
AUTOMOTIVE MOSFET IRLR3110ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
IRLU3110ZPbF
HEXFET® Power MOSFET
D
VDSS = 100V
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
G
RDS(on) = 14mΩ
S
D-Pak
I-Pak
IRLR3110ZPbF IRLU3110ZPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silic...
Similar Datasheet