Document
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PD - 96896
AUTOMOTIVE MOSFET
Features
Logic Level Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax
l l
IRLR3705Z IRLU3705Z
HEXFET® Power MOSFET
D
VDSS = 55V RDS(on) = 8.0mΩ
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
G S
ID = 42A
D-Pak IRLR3705Z
Max.
89 63 42 360 130 0.88 ± 16
I-Pak IRLU3705Z
Units
A
Absolute Maximum Ratings
Parameter
I D @ T C = 25°C Continuous Drain Current, V GS @ 10V (Silicon Limited) I D @ T C = 100°C Continuous Drain Current, V GS @ 10V I D @ T C = 25°C Continuous Drain Current, V GS @ 10V (Package Limited) Pulsed Drain Current I DM
P D @T C = 25°C Power Dissipation V GS Linear Derating Factor Gate-to-Source Voltage
W W/°C V mJ A mJ
E AS (Thermally limited) Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value E AS (Tested ) I AR E AR TJ T STG Avalanche Current
d
Ã
h
110 190 See Fig.12a, 12b, 15, 16 -55 to + 175
Repetitive Avalanche Energy Operating Junction and Storage Temperature Range
g
°C 300 (1.6mm from case ) 10 lbf in (1.1N m)
Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R θJC R θJA R θJA Junction-to-Case
y
y
j
Parameter
Typ.
Max.
1.14 40 110
Units
°C/W
Junction-to-Ambient (PCB mount) Junction-to-Ambient
j
ij
––– ––– –––
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
9/29/04
IRLR/U3705Z
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
Min. Typ. Max. Units
55 ––– ––– ––– ––– ––– 0.053 6.5 ––– ––– ––– ––– ––– ––– ––– ––– 44 13 22 17 150 33 70 4.5 7.5 2900 420 230 1550 320 500 ––– ––– 8.0 11 12 3.0 ––– 20 250 200 -200 66 ––– ––– ––– ––– ––– ––– ––– nH ––– ––– ––– ––– ––– ––– ––– pF ns nC nA V S µA V mΩ
Conditions
VGS = 0V, ID = 250µA VGS = 10V, ID = 42A VGS = 5.0V, ID VGS = 4.5V, ID
V/°C Reference to 25°C, ID = 1mA
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff.
Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Rev.