AUTOMOTIVE MOSFET
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PD - 96896
AUTOMOTIVE MOSFET
Features
Logic Level Advanced Process Technology lUltra Low On-Resis...
Description
www.DataSheet4U.com
PD - 96896
AUTOMOTIVE MOSFET
Features
Logic Level Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax
l l
IRLR3705Z IRLU3705Z
HEXFET® Power MOSFET
D
VDSS = 55V RDS(on) = 8.0mΩ
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
G S
ID = 42A
D-Pak IRLR3705Z
Max.
89 63 42 360 130 0.88 ± 16
I-Pak IRLU3705Z
Units
A
Absolute Maximum Ratings
Parameter
I D @ T C = 25°C Continuous Drain Current, V GS @ 10V (Silicon Limited) I D @ T C = 100°C Continuous Drain Current, V GS @ 10V I D @ T C = 25°C Continuous Drain Current, V GS @ 10V (Package Limited) Pulsed Drain Current I DM
P D @T C = 25°C Power Dissipation V GS Linear Derating Factor Gate-to-Source Voltage
W W/°C V mJ A mJ
E AS (Thermally limited) Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value E AS (Tested ) I AR E AR TJ T STG Avalanche Current
d
Ã
h
110 190 See Fig.12a, 12b, 15, 16 -55 to + 175
Repetitive Avalanche Energy Operating Junction and...
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