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PD - 94266
SMPS MOSFET
IRLR3714 IRLU3714
HEXFET® Power MOSFET
Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits
l l l
VDSS
20V
RDS(on) max
20mΩ
ID
36A
Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current
D-Pak IRLR3714
I-Pak IRLU3714
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TC ID @ TC I DM PD @TC PD @TC
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
20 ± 20 36
31 140 47 33 0.31 -55 to + 175
Units
V V A W W W/°C °C
= 25°C = 70°C = 25°C = 70°C
TJ , TSTG
Thermal Resistance
Parameter
RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient Junction-to-Ambient (PCB mount)
Typ.
––– ––– –––
Max.
3.2 50 110
Units
°C/W
Notes through
are on page 10
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1
06/15/01
IRLR3714/IRLU3714
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– Static Drain-to-Source On-Resistance ––– ––– Gate Threshold Voltage 1.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. Max. Units ––– ––– V 0.022 ––– V/°C 15 20 mΩ 21 28 ––– 3.0 V ––– 20 µA ––– 100 ––– 200 nA ––– -200 Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 18A VGS = 4.5V, ID = 14A VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 16V VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 17 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 6.5 1.8 2.9 7.1 8.7 78 10 4.5 670 470 68 Max. Units Conditions ––– S VDS = 10V, ID = 14A 9.7 ID = 14A ––– nC VDS = 10V ––– VGS = 4.5V ––– VGS = 0V, VDS = 10V ––– VDD = 10V ––– ID = 14A ns ––– RG = 1.8Ω ––– VGS = 4.5V ––– VGS = 0V ––– VDS = 10V ––– pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
––– –––
Max.
72 14
Units
mJ A
Diode Characteristics
Symbol
IS
I SM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge
Min. Typ. Max. Units ––– 36
A ––– 140 ––– ––– ––– ––– ––– ––– ––– 1.3 0.88 ––– 35 53 34 51 35 53 35 53 V ns nC ns nC
VSD trr Q rr trr Q rr
Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 18A, VGS = 0V TJ = 125°C, IS = 18A, VGS = 0V TJ = 25°C, IF = 18A, VR=10V di/dt = 100A/µs TJ = 125°C, IF = 18A, VR=10V di/dt = 100A/µs
2
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IRLR3714/IRLU3714
10000
VGS 15V 10V 4.5V 3.0V 2.7V 2.5V 2.2V BOTTOM 2.0V TOP
1000
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
1000
100
100
VGS 15V 10V 4.5V 3.0V 2.7V 2.5V 2.2V BOTTOM 2.0V TOP
10
10
1
2.0V
1
0.1
2.0V 20µs PULSE WIDTH Tj = 25°C
20µs PULSE WIDTH Tj = 175°C
0.1 100 0.1 1 10 100
0.01 0.1 1 10
VDS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
2.5
I D = 36A
ID , Drain-to-Source Current (Α )
2.0
100.00
RDS(on) , Drain-to-Source On Resistance
T J = 25°C TJ = 175°C
(Normalized)
1.5
1.0
10.00
0.5
1.00 2.0 4.0
VDS = 15V 20µs PULSE WIDTH
6.0 8.0 10.0
0.0 -60 -40 -20 0 20 40 60 80
V GS = 10V
100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature
( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRLR3714/IRLU3714
10000
15
VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd , C ds SHORTED Crss = C gd Coss = C ds + Cgd
ID = 14A
V DS = 16V V DS = 10V
12
C, Capacitance(pF)
Ciss Coss
VGS, Gate-to-Source Voltage (V)
1000
9
6
100
Crss
3
10 1 10 100
0 0 4 8 12 16 20
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000.00
1000 OPERATION IN THIS AREA LIMITED BY R DS (on)
100.00
T J = 175°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100 100µsec 10 1msec
10.00
1.00
T J = 25°C
1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 10
10msec
VGS = 0V 0.10 0.0 1.0 2.0 3.0 VSD , Source-toDrain V.