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3KASMC1x Dataheets PDF



Part Number 3KASMC1x
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Surface Mount Automotive Transient Voltage Suppressors
Datasheet 3KASMC1x Datasheet3KASMC1x Datasheet (PDF)

www.DataSheet4U.com 3KASMC10 thru 3KASMC43A New Product Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability & High Reliability Conditions FEATURES • Patented PAR® construction en Pat t ed* • Available in Unidirectional polarity only • 3000 W peak pulse power capability with a 10/1000 µs waveform • Excellent clamping capability • Very fast response time • Low incremental surge resistance * Patent #'s 4,980,315 5,166,769 5,278,094 .

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www.DataSheet4U.com 3KASMC10 thru 3KASMC43A New Product Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability & High Reliability Conditions FEATURES • Patented PAR® construction en Pat t ed* • Available in Unidirectional polarity only • 3000 W peak pulse power capability with a 10/1000 µs waveform • Excellent clamping capability • Very fast response time • Low incremental surge resistance * Patent #'s 4,980,315 5,166,769 5,278,094 • Typical ID less than 1.0 µA above 13 V rating DO-214AB (SMC) • Meets MSL level 1, per J-STD-020C, LF max peak of 260 °C • Solder Dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. MECHANICAL DATA Case: DO-214AB (SMC) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D HE3 suffix for high reliability grade (AEC Q101 qualified) Polarity: Color band denotes cathode end MAJOR RATINGS AND CHARACTERISTICS VWM PPPM PD IFSM Tj max. 10 V to 43 V 3000 W 6.0 W 200 A 185 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 µs waveform (1) SYMBOL (Fig. 3) PPPM IPPM IFSM PD VF TJ, TSTG VALUE Minimum 3000 see next table 200 6.0 3.5 - 65 to + 185 UNIT W A A W V °C Peak power pulse current with a 10/1000 µs waveform (1) (Fig. 1) Peak forward surge current 8.3 ms single half sine-wave (2) Power dissipation on infinite heatsink at TL = 75 °C (Fig. 6) Maximum instantaneous forward voltage at 100 A (2) Operating junction and storage temperature range Note: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2 (2) Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum Document Number 88480 29-Jun-06 www.vishay.com 1 3KASMC10 thru 3KASMC43A Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE MARKING CODE BREAKDOWN VOLTAGE V(BR) (1) AT IT (V) MIN 11.1 11.1 12.2 12.2 13.3 13.3 14.4 14.4 15.6 15.6 16.7 16.7 17.8 17.8 18.9 18.9 20.0 20.0 22.2 22.2 24.4 24.4 26.7 26.7 28.9 28.9 31.1 31.1 33.3 33.3 36.7 36.7 40.0 40.0 44.4 44.4 47.8 47.8 MAX 13.6 12.3 14.9 13.5 16.3 14.7 17.6 15.9 19.1 17.2 20.4 18.5 21.8 19.7 23.1 20.9 24.4 22.1 27.1 24.5 29.8 26.9 32.6 29.5 35.3 31.9 38.0 34.4 40.7 36.8 44.9 40.6 48.9 44.2 54.3 49.1 58.4 52.8 TEST CURRENT IT (mA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 STAND-OFF VOLTAGE VWM (V) 10 10 11 11 12 12 13 13 14 14 15 15 16 16 17 17 18 18 20 20 22 22 24 24 26 26 28 28 30 30 33 33 36 36 40 40 43 43 MAXIMUM REVERSE LEAKAGE AT VWM IR (µA) 5.0 5.0 5.0 5.0 2.0 2.0 2.0 2.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 TJ = 150 °C MAXIMUM REVERSE LEAKAGE AT VWM ID (µA) 50 50 50 50 20 20 20 20 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 15 15 15 15 20 20 20 20 20 20 MAXIMUM PEAK PULSE SURGE CURRENT IPPM (2) (A) 160 177 149 165 136 151 126 140 116 129 112 123 104 115 98.4 109 93.2 103 83.8 92.6 76.1 84.5 69.8 77.1 64.4 71.3 60.0 66.1 56.1 62.0 50.8 56.3 46.7 51.6 42.0 46.5 39.1 43.2 MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 18.8 17.0 20.1 18.2 22.0 19.9 23.8 21.5 25.8 23.2 26.9 24.4 28.8 26.0 30.5 27.6 32.2 29.2 35.8 32.4 39.4 35.5 43.0 38.9 46.6 42.1 50.0 45.4 53.5 48.4 59.0 53.3 64.3 58.1 71.4 64.5 76.7 69.4 DEVICE TYPE 3KASMC10 3KASMC10A 3KASMC11 3KASMC11A 3KASMC12 3KASMC12A 3KASMC13 3KASMC13A 3KASMC14 3KASMC14A 3KASMC15 3KASMC15A 3KASMC16 3KASMC16A 3KASMC17 3KASMC17A 3KASMC18 3KASMC18A 3KASMC20 3KASMC20A 3KASMC22 3KASMC22A 3KASMC24 3KASMC24A 3KASMC26 3KASMC26A 3KASMC28 3KASMC28A 3KASMC30 3KASMC30A 3KASMC33 3KASMC33A 3KASMC36 3KASMC36A 3KASMC40 3KASMC40A 3KASMC43 3KASMC43A Note: 3AW 3AX 3AY 3AZ 3BD 3BE 3BF 3BG 3BH 3BK 3BL 3BM 3BN 3BP 3BQ 3BR 3BS 3BT 3BU 3BV 3BW 3BX 3BY 3BZ 3CD 3CE 3CF 3CG 3CH 3CK 3CL 3CM 3CN 3CP 3CQ 3CR 3CS 3CT (1) Pulse test: tp ≤ 50 ms (2) Surge current waveform per Fig. 3 and derated per Fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 www.vishay.com 2 Document Number 88480 29-Jun-06 3KASMC10 thru 3KASMC43A Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Thermal resistance junction to ambient air Thermal resistance Junction to leads Note: (1) Mounted on minimum recommended pad layout (1) SYMBOL RθJA RθJL VALUE 77.5 18.3 UNIT °C/W ORDERING INFORMATION PREFERRED P/N 3KASMC10AHE3/57T 3KASMC10AHE3/9AT UNIT WEIGHT (g) 0.211 0.211 PREFERRED PACKAGE CODE 57T 9AT BASE QUANTITY 850 3500.


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