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CPH6320 Dataheets PDF



Part Number CPH6320
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description General-Purpose Switching Device Applications
Datasheet CPH6320 DatasheetCPH6320 Datasheet (PDF)

www.DataSheet4U.com Ordering number : ENN8208 CPH6320 P-Channel Silicon MOSFET CPH6320 Features • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on .

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www.DataSheet4U.com Ordering number : ENN8208 CPH6320 P-Channel Silicon MOSFET CPH6320 Features • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm) Conditions Ratings --12 ±8 --3.5 --14 1.6 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=--1mA, VGS=0 VDS=-12V, VGS=0 VGS=±6.4V, VDS=0 VDS=-6V, ID=--1mA VDS=-6V, ID=--1.7A ID=--1.7A, VGS=-4.5V ID=--0.8A, VGS=-2.5V ID=--0.4A, VGS=-1.8V VDS=-6V, f=1MHz VDS=-6V, f=1MHz VDS=-6V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min --12 --10 ±10 --0.3 3.3 4.7 75 110 150 450 100 85 15 90 62 50 98 155 225 --1.0 typ max Unit V µA µA V S mΩ mΩ mΩ pF pF pF ns ns ns ns Marking : JW Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 12805PE TS IM TA-100050 No.8208-1/4 CPH6320 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=--6V, VGS=--4.5V, ID=-3.5A VDS=--6V, VGS=--4.5V, ID=-3.5A VDS=--6V, VGS=--4.5V, ID=-3.5A IS=--3.5A, VGS=0 Ratings min typ 6.5 0.8 2.0 --0.9 --1.5 max Unit nC nC nC V Package Dimensions unit : mm 2151A 2.9 6 5 4 0.15 Switching Time Test Circuit VIN VDD= --6V 0.2 0V --4.5V VIN ID= --1.7A RL=3.53Ω 0.6 0.05 1.6 2.8 PW=10µs D.C.≤1% D VOUT 0.6 1 2 0.2 3 0.95 G 0.4 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 CPH6320 P.G 50Ω 0.7 0.9 S --3.0 ID -- VDS 0V 5V --3 . --3.0 ID -- VGS VDS= --6V --2.5 Drain Current, ID -- A --3 . --2 .5 V --2.5 --2.0 Drain Current, ID -- A 5V --4 . 8 --1. V --2.0 --1.5 V --1.5 --1.5 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 IT04325 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 25 --1.4 VGS= --1.0V °C --0.5 --0.5 Ta = --25 °C --1.0 --1.0 75 °C --1.6 --1.8 Drain-to-Source Voltage, VDS -- V 250 RDS(on) -- VGS Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Gate-to-Source Voltage, VGS -- V 300 IT04326 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 200 250 200 150 ID= --0.8A --1.7A 100 150 I D= , --0.4A = --1 VGS .8V 100 --4.5V A, V GS= I D= --1.7 .8 I D= --0 = --2.5 A, V GS V 50 50 0 0 --1 --2 --3 --4 --5 --6 --7 --8 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT09181 Ambient Temperature, Ta -- °C IT09182 No.8208-2/4 CPH6320 3 yfs -- ID VDS= --6V --10 7 5 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 2 Forward Current, IF -- A 10 7 5 3 2 3 2 25°C --25 Ta= °C 75° C --1.0 7 5 Ta= 75°C 3 2 25°C 1.0 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7 --0.1 --0.4 --0.6 --25°C --0.8 --1.0 --1.2 IT04330 Drain Current, ID -- A 5 3 IT04329 1000 7 5 SW Time -- ID VDD= --6V VGS= --4.5V Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- VDS f=1MHz Ciss Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 2 tr 100 7 5 3 2 3 2 td(off) tf 100 7 5 Coss Crss td(on) 2 3 5 7 --1.0 2 3 5 7 10 --0.1 3 0 --2 --4 --6 --8 --10 --12 IT04332 Drain Current, ID -- A --4.5 --4.0 --3.5 IT04331 3 2 --10 7 5 VGS -- Qg VDS= --6V ID= --3.5A Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V ASO IDP= --14A <10µs Gate-to-Source Volt.


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