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Ordering number : ENN8208
CPH6320
P-Channel Silicon MOSFET
CPH6320
Features
• • •
General-Purpose Switching Device Applications
Low ON-resistance. Ultrahigh-speed switching. 1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm) Conditions Ratings --12 ±8 --3.5 --14 1.6 150 --55 to +150 Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=--1mA, VGS=0 VDS=-12V, VGS=0 VGS=±6.4V, VDS=0 VDS=-6V, ID=--1mA VDS=-6V, ID=--1.7A ID=--1.7A, VGS=-4.5V ID=--0.8A, VGS=-2.5V ID=--0.4A, VGS=-1.8V VDS=-6V, f=1MHz VDS=-6V, f=1MHz VDS=-6V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min --12 --10 ±10 --0.3 3.3 4.7 75 110 150 450 100 85 15 90 62 50 98 155 225 --1.0 typ max Unit V µA µA V S mΩ mΩ mΩ pF pF pF ns ns ns ns
Marking : JW
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12805PE TS IM TA-100050 No.8208-1/4
CPH6320
Continued from preceding page.
Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=--6V, VGS=--4.5V, ID=-3.5A VDS=--6V, VGS=--4.5V, ID=-3.5A VDS=--6V, VGS=--4.5V, ID=-3.5A IS=--3.5A, VGS=0 Ratings min typ 6.5 0.8 2.0 --0.9 --1.5 max Unit nC nC nC V
Package Dimensions unit : mm 2151A
2.9 6 5 4 0.15
Switching Time Test Circuit
VIN
VDD= --6V
0.2
0V --4.5V VIN ID= --1.7A RL=3.53Ω
0.6
0.05
1.6
2.8
PW=10µs D.C.≤1%
D
VOUT
0.6
1
2
0.2
3 0.95
G
0.4
1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6
CPH6320 P.G 50Ω
0.7 0.9
S
--3.0
ID -- VDS
0V
5V --3 .
--3.0
ID -- VGS
VDS= --6V
--2.5
Drain Current, ID -- A
--3 .
--2
.5
V
--2.5
--2.0
Drain Current, ID -- A
5V
--4 .
8 --1.
V
--2.0
--1.5
V --1.5
--1.5
0 0
--0.1
--0.2
--0.3
--0.4
--0.5 IT04325
0 --0.2
--0.4
--0.6
--0.8
--1.0
--1.2
25
--1.4
VGS= --1.0V
°C
--0.5
--0.5
Ta =
--25 °C
--1.0
--1.0
75 °C
--1.6
--1.8
Drain-to-Source Voltage, VDS -- V
250
RDS(on) -- VGS
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
Gate-to-Source Voltage, VGS -- V
300
IT04326
RDS(on) -- Ta
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
200
250
200
150
ID= --0.8A --1.7A
100
150
I D=
, --0.4A
= --1 VGS
.8V
100
--4.5V A, V GS= I D= --1.7
.8 I D= --0
= --2.5 A, V GS
V
50
50
0 0 --1 --2 --3 --4 --5 --6 --7 --8
0 --60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
IT09181
Ambient Temperature, Ta -- °C
IT09182
No.8208-2/4
CPH6320
3
yfs -- ID
VDS= --6V
--10 7 5
IF -- VSD
VGS=0
Forward Transfer Admittance, yfs -- S
2
Forward Current, IF -- A
10 7 5 3 2
3 2
25°C
--25 Ta=
°C
75°
C
--1.0 7 5
Ta= 75°C
3 2
25°C
1.0 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7
--0.1 --0.4
--0.6
--25°C
--0.8
--1.0
--1.2 IT04330
Drain Current, ID -- A
5 3
IT04329 1000 7 5
SW Time -- ID
VDD= --6V VGS= --4.5V
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
Diode Forward Voltage, VSD -- V
Switching Time, SW Time -- ns
2
tr
100 7 5 3 2
3 2
td(off)
tf
100 7 5
Coss
Crss
td(on)
2 3 5 7 --1.0 2 3 5 7
10 --0.1
3 0 --2 --4 --6 --8 --10 --12 IT04332
Drain Current, ID -- A
--4.5 --4.0 --3.5
IT04331 3 2 --10 7 5
VGS -- Qg
VDS= --6V ID= --3.5A
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
ASO
IDP= --14A
<10µs
Gate-to-Source Volt.