CPH6324

www.DataSheet4U.com Ordering number : ENN0000 CPH6324 P-Channel Silicon MOSFET CPH6324 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions unit : mm 2151A [CPH6324] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 1 2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2✕0.8mm) Conditions 0.7 0.9 0.2 3 0.95 0.6 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 Ratings -60 ±20 --2 --8 1.6 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate-to-Source Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=--1mA, VGS=0 VDS=-60V, VGS=0 VGS=±16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--1A ID=--1A, VGS=-10V ID=--1A, VGS=-4V Ratings min --60 --1 ±10 --1.2 1.6 2.4 275 400 360 560 --2.6 typ max Unit V µA µA V S mΩ mΩ Marking : YA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require...