ULTRAHIGH-SPEED SWITCHING APPLICATIONS
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Ordering number : ENN0000
CPH6324
P-Channel Silicon MOSFET
CPH6324
Ultrahigh-Speed Switching Appl...
Description
www.DataSheet4U.com
Ordering number : ENN0000
CPH6324
P-Channel Silicon MOSFET
CPH6324
Ultrahigh-Speed Switching Applications
Preliminary Features
Package Dimensions
unit : mm 2151A
[CPH6324]
6 5 4
0.6 0.05 1.6 2.8 0.2 2.9 0.15
Low ON-resistance. Ultrahigh-speed switching. 4V drive.
1
2
0.4
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2✕0.8mm) Conditions
0.7 0.9
0.2
3 0.95
0.6
1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6
Ratings -60 ±20 --2 --8 1.6 150 --55 to +150
Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate-to-Source Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=--1mA, VGS=0 VDS=-60V, VGS=0 VGS=±16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--1A ID=--1A, VGS=-10V ID=--1A, VGS=-4V Ratings min --60 --1 ±10 --1.2 1.6 2.4 275 400 360 560 --2.6 typ max Unit V µA µA V S mΩ mΩ
Marking : YA
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require...
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