www.DataSheet4U.com
FDMS8660S N-Channel PowerTrench® SyncFETTM
August 2006
FDMS8660S N-Channel PowerTrench® SyncFETTM...
www.DataSheet4U.com
FDMS8660S N-Channel PowerTrench® SyncFETTM
August 2006
FDMS8660S N-Channel PowerTrench® SyncFETTM
30V, 40A, 2.4mΩ Features General Description
Max rDS(on) = 2.4mΩ at VGS = 10V, ID = 25A Max rDS(on) = 3.5mΩ at VGS = 4.5V, ID = 21A Advanced Package and Silicon combination for low RDS(ON) and high efficiency SyncFET
Schottky Body Diode MSL1 robust package design RoHS Compliant
tm
The FDMS8660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(ON) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic
Schottky body diode.
Application
Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification
Pin 1 S S
5
S G
4 3 2 1
6 7
D
D
D
D MLP5x6 (Bottom view)
8
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation TC = 25°C TA = 25°C (Note 1a) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings 30 ±20 40 147 25 200 83 2.5 -55 to +150 W °C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC RθJA Thermal Resistance, Juncti...