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HVC142A

Renesas Technology

Silicon Epitaxial Planar Pin Diode

www.DataSheet4U.com HVC142A Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0422-0100 (Previous: ADE-208...


Renesas Technology

HVC142A

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www.DataSheet4U.com HVC142A Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0422-0100 (Previous: ADE-208-1588) Rev.1.00 Nov 26, 2004 Features An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.35 pF max) Low forward resistance. (rf = 1.3 Ω max) Ultra small Flat Lead Package (UFP) is suitable for surface mount design. Ordering Information Type No. HVC142A Laser Mark T6 Package Code UFP Pin Arrangement Cathode mark Mark 1 T6 2 1. Cathode 2. Anode Rev.1.00, Nov 26, 2004, page 1 of 5 HVC142A Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Ratings 30 100 150 125 −55 to +125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Forward voltage Capacitance Forward resistance 1 ESD-Capability * Note: Symbol IR VF C rf — Min — — — — 100 Typ — — — — — Max 100 1.0 0.35 1.3 — Unit nA V pF Ω V Test Condition VR = 30 V IF = 10 mA VR = 1 V, f = 1 MHz IF = 10 mA, f = 100 MHz C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse. 1. Failure criterion; IR > 100 nA at VR = 30 V Rev.1.00, Nov 26, 2004, page 2 of 5 HVC142A Main Characteristic 10−2 10−7 10−8 Reverse current IR (A) 10−4 Forward current IF (A) 10−9 10−10 10−11 10−12 10−13 10 −6 10−8 10−10 10−12 0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50 Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage Rever...




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