Silicon Epitaxial Planar Pin Diode
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HVC142A
Silicon Epitaxial Planar Pin Diode for Antenna Switching
REJ03G0422-0100 (Previous: ADE-208...
Description
www.DataSheet4U.com
HVC142A
Silicon Epitaxial Planar Pin Diode for Antenna Switching
REJ03G0422-0100 (Previous: ADE-208-1588) Rev.1.00 Nov 26, 2004
Features
An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.35 pF max) Low forward resistance. (rf = 1.3 Ω max) Ultra small Flat Lead Package (UFP) is suitable for surface mount design.
Ordering Information
Type No. HVC142A Laser Mark T6 Package Code UFP
Pin Arrangement
Cathode mark Mark 1
T6
2 1. Cathode 2. Anode
Rev.1.00, Nov 26, 2004, page 1 of 5
HVC142A
Absolute Maximum Ratings
(Ta = 25°C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Ratings 30 100 150 125 −55 to +125 Unit V mA mW °C °C
Electrical Characteristics
(Ta = 25°C)
Item Reverse current Forward voltage Capacitance Forward resistance 1 ESD-Capability * Note: Symbol IR VF C rf — Min — — — — 100 Typ — — — — — Max 100 1.0 0.35 1.3 — Unit nA V pF Ω V Test Condition VR = 30 V IF = 10 mA VR = 1 V, f = 1 MHz IF = 10 mA, f = 100 MHz C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse.
1. Failure criterion; IR > 100 nA at VR = 30 V
Rev.1.00, Nov 26, 2004, page 2 of 5
HVC142A
Main Characteristic
10−2 10−7 10−8
Reverse current IR (A)
10−4
Forward current IF (A)
10−9 10−10 10−11 10−12 10−13
10
−6
10−8
10−10
10−12
0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
50
Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage
Rever...
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