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IRFR220A Dataheets PDF



Part Number IRFR220A
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Advanced Power MOSFET
Datasheet IRFR220A DatasheetIRFR220A Datasheet (PDF)

www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.626 Ω (Typ.) IRFR/U220A BVDSS = 200 V RDS(on) = 0.8 Ω ID = 4.6 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Curr.

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www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.626 Ω (Typ.) IRFR/U220A BVDSS = 200 V RDS(on) = 0.8 Ω ID = 4.6 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25oC) * Total Power Dissipation (TC=25oC) Linear Derating Factor TJ , TSTG TL Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds 1 O o o Value 200 4.6 2.9 18 + _ 30 71 4.6 4 5.0 2.5 40 0.32 - 55 to +150 Units V A A V mJ A mJ V/ns W W W/ C o O 1 O 1 O 3 O 2 o C 300 Thermal Resistance Symbol R θJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 3.14 50 110 o Units C/W * When mounted on the minimum pad size recommended (PCB Mount). Rev. B ©1999 Fairchild Semiconductor Corporation IRFR/U220A Symbol BVDSS ∆BV/ ∆ TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( “ Miller “ ) Charge Min. Typ. Max. Units 200 -2.0 -----------------0.24 ------2.36 275 55 25 10 11 26 15 12 2.4 6.2 --4.0 100 -100 10 100 0.8 -360 65 30 30 30 60 40 17 --nC ns pF µA Ω Ω N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless otherwise specified) Test Condition VGS=0V,ID=250µ A V o See Fig 7 V/ C ID=250 µA V nA VDS=5V,ID=250 µ A VGS=30V VGS=-30V VDS=200V VDS=160V,TC=125 C VGS=10V,ID=2.3A VDS=40V,ID=2.3A 4 O 4 O o VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=100V,ID=5A, RG=18Ω See Fig 13 VDS=160V,VGS=10V, ID=5A See Fig 6 & Fig 12 4 O 5 O 4 O 5 O Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O Min. Typ. Max. Units --------122 0.51 4.6 18 1.5 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25oC,IS=4.6A,VGS=0V TJ=25 oC ,IF=5A diF/dt=100A/µ s 4 O O 4 Notes ; Temperature 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction o 2 L=5mH, I AS=4.6A, V DD=50V, R G=27Ω, Starting T J =25 C O o 3 ISD < _180A/ µs, V DD < _ 5A, di/dt< _ BVDSS , Starting T J =25 C O _ < Pulse Test : Pulse Width = 250 s, Duty Cycle 2% 4 µ O 5 Essentially Independent of Operating Temperature O N-CHANNEL POWER MOSFET Fig 1. Output Characteristics [A] [A] 101 VGS Top : 15V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V IRFR/U220A Fig 2. Transfer Characteristics 101 ID , Drain Current 100 ID , Drain Current 100 150 oC 25 oC @ Notes : =0V 1. V GS 2. V = 40 V DS 3. 250 µs Pulse Test 6 8 10 10-1 @ Notes : 1. 250 µs Pulse Test 2. T = 25 oC C 100 101 - 55 oC 10-1 10-1 2 4 VDS , Drain-Source Voltage [V] [A] VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current RDS(on) , [ Ω] Drain-Source On-Resistance 2 . 0 Fig 4. Source-Drain Diode Forward Voltage 1 01 1 . 5 VGS = 10 V 1 . 0 IDR , Reverse Drain Current 1 00 0 . 5 VGS = 20 V 1 5 0 oC 2 5 C 1 0-1 0 . 4 0 . 6 0 . 8 1 . 0 1 . 2 o @N o t e : TJ = 2 5 oC 0 . 0 0 3 6 9 12 1 5 1 8 @N o t e s: 1 . VGS = 0 V 2 .2 5 0 µs P u l s eT e s t 1 . 4 1 . 6 1 . 8 ID , Drain Current [A] VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage 5 0 0 Ciss= Cgs+ C h o r t e d) gd ( C ds= s Coss= Cds+ C gd Fig 6. Gate Charge vs. Gate-Source Voltage [V] V 0V DS = 4 1 0 VDS = 1 0 0V VDS = 1 6 0V [pF] C iss 3 0 0 VGS , Gate-Source Voltage 4 0 0 Crss= Cgd Capacitance 2 0 0 C oss @N o t e s: 1 . VGS = 0 V 2 .f=1M H z 5 1 0 0 C rss @N o t e s : ID = 5 . 0A 0 0 3 6 9 1 2 00 10 1 10 VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC] IRFR/U220A BVDSS , (Normalized) Drain-Source Breakdown Voltage N-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature RDS(on) , (Normalized) Drain-Source On-Resistance 3.0 Fig 7. Breakdown Voltage vs. Temperature 1.2 2.5 1.1 2.0 1.0 1.5 1.0 @ Notes : 1. V = 10 V GS 2. I = 2.5 A D 0.9 @ Notes : =0V 1. V GS = 250 µA 2. I D 0.5 0.8 -75 -50 -25 0 25 50 75 100 125 150 175 0.0 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , .


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