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Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.626 Ω (Typ.)
IRFR/U220A
BVDSS = 200 V RDS(on) = 0.8 Ω ID = 4.6 A
D-PAK
2 1 3 1
I-PAK
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25oC) * Total Power Dissipation (TC=25oC) Linear Derating Factor TJ , TSTG TL Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds
1 O
o o
Value 200 4.6 2.9 18 + _ 30 71 4.6 4 5.0 2.5 40 0.32 - 55 to +150
Units V A A V mJ A mJ V/ns W W W/ C
o
O 1 O 1 O 3 O
2
o
C
300
Thermal Resistance
Symbol R θJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 3.14 50 110
o
Units C/W
* When mounted on the minimum pad size recommended (PCB Mount).
Rev. B
©1999 Fairchild Semiconductor Corporation
IRFR/U220A
Symbol BVDSS ∆BV/ ∆ TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( “ Miller “ ) Charge Min. Typ. Max. Units 200 -2.0 -----------------0.24 ------2.36 275 55 25 10 11 26 15 12 2.4 6.2 --4.0 100 -100 10 100 0.8 -360 65 30 30 30 60 40 17 --nC ns pF µA Ω Ω
N-CHANNEL POWER MOSFET
Electrical Characteristics (TC=25oC unless otherwise specified)
Test Condition VGS=0V,ID=250µ A V o See Fig 7 V/ C ID=250 µA V nA VDS=5V,ID=250 µ A VGS=30V VGS=-30V VDS=200V VDS=160V,TC=125 C VGS=10V,ID=2.3A VDS=40V,ID=2.3A
4 O 4 O
o
VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=100V,ID=5A, RG=18Ω See Fig 13 VDS=160V,VGS=10V, ID=5A See Fig 6 & Fig 12
4 O 5 O 4 O 5 O
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
1 O
Min. Typ. Max. Units --------122 0.51 4.6 18 1.5 --A V ns µC
Test Condition Integral reverse pn-diode in the MOSFET TJ=25oC,IS=4.6A,VGS=0V TJ=25 oC ,IF=5A diF/dt=100A/µ s
4 O
O
4
Notes ; Temperature 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction o 2 L=5mH, I AS=4.6A, V DD=50V, R G=27Ω, Starting T J =25 C O o 3 ISD < _180A/ µs, V DD < _ 5A, di/dt< _ BVDSS , Starting T J =25 C O _ < Pulse Test : Pulse Width = 250 s, Duty Cycle 2% 4 µ O 5 Essentially Independent of Operating Temperature O
N-CHANNEL POWER MOSFET
Fig 1. Output Characteristics
[A] [A]
101
VGS Top : 15V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V
IRFR/U220A
Fig 2. Transfer Characteristics
101
ID , Drain Current
100
ID , Drain Current
100
150 oC 25 oC @ Notes : =0V 1. V GS 2. V = 40 V DS 3. 250 µs Pulse Test 6 8 10
10-1
@ Notes : 1. 250 µs Pulse Test 2. T = 25 oC C 100 101
- 55 oC 10-1
10-1
2
4
VDS , Drain-Source Voltage [V] [A]
VGS , Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
RDS(on) , [ Ω] Drain-Source On-Resistance
2 . 0
Fig 4. Source-Drain Diode Forward Voltage
1 01
1 . 5
VGS = 10 V
1 . 0
IDR , Reverse Drain Current
1 00
0 . 5
VGS = 20 V
1 5 0 oC 2 5 C 1 0-1 0 . 4 0 . 6 0 . 8 1 . 0 1 . 2
o
@N o t e : TJ = 2 5 oC 0 . 0 0 3 6 9 12 1 5 1 8
@N o t e s: 1 . VGS = 0 V 2 .2 5 0 µs P u l s eT e s t 1 . 4 1 . 6 1 . 8
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
5 0 0 Ciss= Cgs+ C h o r t e d) gd ( C ds= s Coss= Cds+ C gd
Fig 6. Gate Charge vs. Gate-Source Voltage
[V]
V 0V DS = 4 1 0 VDS = 1 0 0V VDS = 1 6 0V
[pF]
C iss 3 0 0
VGS , Gate-Source Voltage
4 0 0
Crss= Cgd
Capacitance
2 0 0
C oss
@N o t e s: 1 . VGS = 0 V 2 .f=1M H z
5
1 0 0
C rss
@N o t e s : ID = 5 . 0A 0 0 3 6 9 1 2
00 10
1 10
VDS , Drain-Source Voltage [V]
QG , Total Gate Charge [nC]
IRFR/U220A
BVDSS , (Normalized) Drain-Source Breakdown Voltage
N-CHANNEL POWER MOSFET
Fig 8. On-Resistance vs. Temperature
RDS(on) , (Normalized) Drain-Source On-Resistance
3.0
Fig 7. Breakdown Voltage vs. Temperature
1.2
2.5
1.1
2.0
1.0
1.5
1.0 @ Notes : 1. V = 10 V GS 2. I = 2.5 A D
0.9
@ Notes : =0V 1. V GS = 250 µA 2. I D
0.5
0.8 -75
-50
-25
0
25
50
75
100
125
150
175
0.0 -75
-50
-25
0
25
50
75
100
125
150
175
TJ , .