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IRFU220A

Advanced Power MOSFET

Description

www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.626 Ω (Typ.) IRFR/U220A BVDSS = 200 V RDS(on) = 0.8 Ω ID = 4.6 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain ...

Fairchild Semiconductor

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