SCH2315

www.DataSheet4U.com Ordering number : ENN8222 SCH2315 P-Channel Silicon MOSFET SCH2315 Features General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Composite type with two MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit Conditions Ratings -12 ±8 --0.9 --3.6 0.65 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss Conditions ID=--1mA, VGS=0 VDS=-12V, VGS=0 VGS=±6.4V, VDS=0 VDS=-6V, ID=--100µA VDS=-6V, ID=--500mA ID=--500mA, VGS=-4.5V ID=--300mA, VGS=-2.5V ID=--100mA, VGS=-1.8V VDS=-6V, f=1MHz VDS=-6V, f=1MHz VDS=-6V, f=1MHz Ratings min --12 --10 ±10 --0.3 0.6 1 470 690 920 92 26.5 18 615 970 1380 --1.0 typ max Unit V µA µA V S mΩ mΩ mΩ pF pF pF Marking : MQ Continued on next page. Any and all SANYO produ...