EDI7F33512C

www.DataSheet4U.com EDI7F33512C 512Kx32 Flash DESCRIPTION The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate. The modules offer access times between 80 and 150ns allowing for operation of high-speed microprocessors without wait states. FIG. 1 BLOCK DIAGRAMS EDI7F33512C-BNC: 512Kx32 80 PIN SIMM EØ\ A0-A18 G\ 512K X8 W0\ 512K X8 W1\ 512K X8 W2\ 512K X8 W3\ DQ24-DQ31 DQ16-DQ23 DQ8-DQ15 DQ0-DQ7 FEATURES • 512Kx32, 2x512Kx32 and 4x512Kx32 Densities • Based on AMDs - AM290F040 Flash Device • Fast Read Access Time - 80-150ns • 5- Volt-Only Reprogramming • Sector Erase Architecture • Uniform sectors of 64 Kbytes each • Any combination of sectors can be erased • Also supports full chip erase • Sector Protection • Hardware method that disables any combination of sectors from write or erase operations • Embedded Erase Algorithms • Automatically preprograms and erases the chip or any combination of sectors • Embedded Program Algorithms • Automatically programs and verifies data at specified address • Data Polling and Toggle Bit feature for detection of program or erase cycle completion • Low Power Dissipation • 40mA per Device Active Current • 10µA per Device CMOS Standby Current • Typical Endurance >100,000 Cycles • Single 5 Volt ±10% Supply • CMOS and TTL Compatible Inputs and Outputs • Commercial and Indust...