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HVD350B

Renesas Technology

Variable Capacitance Diode

HVD350B Variable Capacitance Diode for VCO Features • High capacitance ratio. (n = 2.80 min) • Low series resistance. (...


Renesas Technology

HVD350B

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HVD350B Variable Capacitance Diode for VCO Features High capacitance ratio. (n = 2.80 min) Low series resistance. (rs = 0.50 Ω max) Good C-V linearity. Super small Flat Lead Package (SFP) is suitable for surface mount design. Ordering Information Type No. HVD350B Laser Mark A Package Name SFP Pin Arrangement Cathode mark Mark A 1 2 1. Cathode 2. Anode REJ03G0497-0200 Rev.2.00 Jan 20, 2006 Package Code PUSF0002ZB-A Rev.2.00 Jan 20, 2006 page 1 of 4 HVD350B Absolute Maximum Ratings Item Reverse voltage Junction temperature Storage temperature VR Tj Tstg Symbol Value 15 125 −55 to +125 (Ta = 25°C) Unit V °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Reverse current IR1   10 nA VR = 15 V IR2   100 VR = 15 V, Ta = 60°C Capacitance C1 15.50  17.00 pF VR = 1 V, f = 1 MHz C4 5.00  6.00 VR = 4 V, f = 1 MHz Capacitance ratio n 2.80   — C1 / C4 Series resistance rS   0.50 Ω VR = 1 V, f = 470 MHz Note: For SFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip part is considered as unquestioned. Please kindly consider soldering nature. Rev.2.00 Jan 20, 2006 page 2 of 4 HVD350B Main Characteristic 10−8 10−9 Reverse current IR (A) 10−10 10−11 10−12 10−13 10−14 10−15 0 4 8 12 16 20 Reverse voltage VR (V) Fig.1 Reverse current vs. Reverse voltage Series resistance rS (Ω) 0.5 f=470MHz 0.4 0.3 0.2 0....




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