RADIATION HARDENED POWER MOSFET THRU-HOLE
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PD - 90677D
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204)
Product Summary
Part Number IRH7150...
Description
www.DataSheet4U.com
PD - 90677D
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204)
Product Summary
Part Number IRH7150 IRH3150 IRH4150 IRH8150 Radiation Level RDS(on) 100K Rads (Si) 0.065Ω 300K Rads (Si) 0.065Ω 600K Rads (Si) 0.065Ω 1000K Rads (Si) 0.065Ω ID 34A 34A 34A 34A
IRH7150 100V, N-CHANNEL
RAD Hard HEXFET TECHNOLOGY
™ ®
TO-204AE
International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energ...
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