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IXFN55N50 Dataheets PDF



Part Number IXFN55N50
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Power MOSFET
Datasheet IXFN55N50 DatasheetIXFN55N50 Datasheet (PDF)

www.DataSheet4U.com HiPerFETTM Power MOSFET Single Die MOSFET Preliminary data sheet Symbol Test Conditions VDSS ID25 55A 50A 55A 50A RDS(on) 80mΩ 100mΩ 80mΩ 100mΩ trr 250ns 250ns 250ns 250ns IXFN IXFN IXFK IXFK 55N50 50N50 55N50 50N50 500V 500V 500V 500V IXFK 55N50 500 500 ± 20 ± 30 55 220 55 60 5 560 Maximum Ratings IXFK IXFN 50N50 55N50 500 500 ± 20 ± 30 50 200 50 55 220 55 60 5 600 -55 ... +150 150 -55 ... +150 TO-264 AA (IXFK) IXFN 50N50 V V V V 50 A 200 A 50 A mJ V/ns D S G D S .

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www.DataSheet4U.com HiPerFETTM Power MOSFET Single Die MOSFET Preliminary data sheet Symbol Test Conditions VDSS ID25 55A 50A 55A 50A RDS(on) 80mΩ 100mΩ 80mΩ 100mΩ trr 250ns 250ns 250ns 250ns IXFN IXFN IXFK IXFK 55N50 50N50 55N50 50N50 500V 500V 500V 500V IXFK 55N50 500 500 ± 20 ± 30 55 220 55 60 5 560 Maximum Ratings IXFK IXFN 50N50 55N50 500 500 ± 20 ± 30 50 200 50 55 220 55 60 5 600 -55 ... +150 150 -55 ... +150 TO-264 AA (IXFK) IXFN 50N50 V V V V 50 A 200 A 50 A mJ V/ns D S G D S VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C Continuous Transient TC = 25°C T C =25 ° C, TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C D (TAB) miniBLOC, SOT-227 B (IXFN) E153432 S G W °C °C °C °C V~ V~ G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 300 N/A N/A 0.9/6 N/A 10 N/A 2500 3000 Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1mA VDS = VGS, ID = 8mA VGS = ±20V; VDS = 0V VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 • ID25 Note 1 Characteristic Values Min. Typ. Max. 500 2.5 4.5 ± 200 TJ = 25°C TJ = 125°C 55N50 50N50 25 2 80 100 V V nA µA mA mΩ mΩ Features • International standard packages • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls Advantages • Easy to mount • Space savings • High power density © 2002 IXYS All rights reserved 97502F (04/02) IXFK50N50 IXFN50N50 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK RthJC RthCK TO-264 AA TO-264 AA miniBLOC, SOT-227 B miniBLOC, SOT-227 B 0.05 0.15 0.21 VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 Ω (External), VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 10 V; ID = 0.5 • ID25 Note 1 Characteristic Values Min. Typ. Max. 45 9400 1280 460 45 60 120 45 330 55 155 0.22 S pF pF pF ns ns ns ns nC nC nC K/W K/W K/W K/W A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Dim. IXFK55N50 IXFN55N50 TO-264 AA Outline Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 ..


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