BSR58LT1

BSR58LT1 JFET Chopper Transistor N−Channel − Depletion Features Pb−Free Package is Available MAXIMUM RATINGS Rating Symbol Value Unit Drain −Gate Voltage Gate −Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C VDG −40 Vdc VGS −35 Vdc IG 50 mAdc PD 350 mW 2.8 mW/° C Lead Temperature Operating and Storage Junction Temperature Range TL 300 °C TJ, Tstg − 65 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Gate −Source Breakdown Voltage (IG = −1.0 mAdc) V(BR)GSS Gate Reverse Current (VGS = −15 Vdc) IGSS Gate Source Cutoff Voltage (VDS = 5.0 Vdc, ID = 1.0 mAdc) VGS(off) Drain−Cutoff Current (VDS = 5.0 Vdc, VGS = −10 Vdc) ID(off) ON CHARACTERISTICS Zero−Gate−Voltage Drain Current (Note 1) (VDS = 15 Vdc) IDSS Static Drain−Source On Resistance (VDS = 0.1 Vdc) rDS(on) Drain Gate and Source Gate On−Capacitance (VDS = VGS = 0, f = 1.0 MHz) Cdg(on) + Csg(on) Drain Gate Off−Capacitance (VGS = −10 Vdc, f = 1.0 MHz) Cdg(off) Source Gate Off−Capacitance (VGS = −10 Vdc, f = 1.0 MHz) Csg(off) 1. Pulse...