FDP8441

FDP8441 N-Channel PowerTrench® MOSFET December 2012 FDP8441 N-Channel PowerTrench® MOSFET 40V, 80A, 2.7mΩ Features „ Typ rDS(on) = 2.1mΩ at VGS = 10V, ID = 80A „ Typ Qg(10) = 215nC at VGS = 10V „ Low Miller Charge „ Low Qrr Body Diode „ UIS Capability (Single Pulse and Repetitive Pulse) „ RoHS Compliant Applications „ Solenoid and Motor Drivers „ Distributed Power Architectures and VRMs ©2012 Fairchild Semiconductor Corporation 1 FDP8441 Rev. C0 www.fairchildsemi.com FDP8441 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 160oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W) Pulsed Single Pulse Avalanche Energy Power dissipation Derate above 25oC Operating and Storage Temperature (Note 1) Ratings 40 ±20 80 23 See Figure 4 947 300 2 -55 to 175 Units V V A mJ W W/oC oC Thermal Characteristics RθJC RθJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient 0.5 (Note 2) 62 oC/W oC/W Package Marking and Ordering Information Device Marking FDP8441 Device FDP8441 Package TO-220AB Reel Size Tube Tape Width N/A Quantity 50 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Sourc...