HVL133A

www.DataSheet4U.com HVL133A Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0066-0100Z Rev.1.00 Jan.21.2004 Features An optimal solution for antenna switching in mobile phones. Low capacitance. (C1 = 1.0 pF max) Low forward resistance. (rf = 0.7 Ω max) Extremely small Flat Package (EFP) is suitable for surface mount design. Ordering Information Type No. HVL133A Laser Mark M Package Code EFP Pin Arrangement Cathode mark Mark 1 M 2 1. Cathode 2. Anode Rev.1.00, Jan.21.2004, page 1 of 4 HVL133A Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Power dissipation Junction temperature Storage temperature Symbol VR Pd Tj Tstg Value 30 100 125 −55 to +125 Unit V mW °C °C Electrical Characteristics (Ta = 25°C) Item Reverse voltage Reverse current Forward voltage Capacitance Symbol VR IR VF C1 C6 Forward resistance rf Min 30 — — — — — Typ — — — — — 0.55 Max — 100 0.85 1.00 0.90 0.70 Ω Unit V nA V pF Test Condition IR = 1 µA VR = 25 V IF = 2 mA VR = 1 V, f = 1 MHz VR = 6 V, f = 1 MHz IF = 2 mA, f = 100 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the EFP package. 2. The material of lead is exposed for cutting plane. Therefore, soldering nature of lead tip part is considered as unquestioned. Please kindly consider soldering nature. Rev.1.00, Jan.21.2004, page 2 of 4 HVL133A Main Characteristic 10–2 10–10 10–4 Reverse current IR (A) Forward current IF (A) 10–11 Ta= 75°C 10–6 10–12 Ta= 50°C 10–8 Ta= 75°C ...