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STT5NF30L
N-CHANNEL 30V - 0.039Ω - 4A SOT23-6L STripFET™II POWER MOSFET
TYPE STT5NF30L VDSS 30 V RD...
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STT5NF30L
N-CHANNEL 30V - 0.039Ω - 4A SOT23-6L STripFET™II POWER MOSFET
TYPE STT5NF30L VDSS 30 V RDS(on) < 0.050 Ω (@ 10V) ID 4A
TYPICAL RDS(on) = 0.039Ω @10V LOW Qg LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting
transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
SOT23-6L
APPLICATIONS DC-DC CONVERTERS POWER MANAGEMENT IN PORTABLE/ DESKTOP PCs SYNCHRONOUS RECTIFICATION DC MOTOR CONTROL (DISK DRIVERS, etc)
INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
SALES TYPE STT5NF30L MARKING STFN PACKAGE SOT23-6L PACKAGING TAPE & REEL
March 2003
1/8
STT5NF30L
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT EAS (1) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Single Pulse Avalanche Energy Value 30 30 ± 16 4 2.5 16 1.6 50 Unit V V V A A A W mJ
()Pulse width limited by safe operating area (1) Starting Tj =25°C, Id = 2 A, VDD = 15V.
THERMAL DATA
Rthj-amb Tl Tstg Thermal Resistance Junction-ambient Max. Operating Junction Temperature Storage Temperature Max 78 - 55 to 150 - 55 to 150 °C/W °C °C
ON/OFF
Symbol V(B...