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NSR0130M2T5G Dataheets PDF



Part Number NSR0130M2T5G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Schottky Barrier Diode
Datasheet NSR0130M2T5G DatasheetNSR0130M2T5G Datasheet (PDF)

www.DataSheet4U.com NSR0130M2T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. • • • • http://onsemi.com Extremely Fast Switching Speed Extremely Low Forward Voltage 0.385 V (max) @ IF = 10 mA Low Reverse Current This is a Pb−Free .

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www.DataSheet4U.com NSR0130M2T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. • • • • http://onsemi.com Extremely Fast Switching Speed Extremely Low Forward Voltage 0.385 V (max) @ IF = 10 mA Low Reverse Current This is a Pb−Free Device 30 V SCHOTTKY BARRIER DIODE MAXIMUM RATINGS Rating Reverse Voltage Forward Current DC Forward Current Surge Peak (60 Hz, 1 cycle) ESD Rating: Class 3B per Human Body Model ESD Rating: Class B per Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Symbol VR IF IFSM Value 30 100 1.0 Unit Vdc mA A 2 1 SOD−723 CASE 509AA PLASTIC 1 1 CATHODE 2 ANODE MARKING DIAGRAM 7A MG G 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range 1. FR−5 Minimum Pad. Symbol PD Max 200 2.0 RqJA TJ, Tstg 600 −55 to +125 Unit mW mW/°C °C/W °C 7A = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NSR0130M2T5G Package SOD−723 Shipping † 2 mm Pitch 8000/Tape & Reel ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Leakage (VR = 10 V) (VR = 30 V) Forward Voltage (IF = 10 mA) (IF = 100 mA) Symbol IR − − VF − − − − 0.385 0.525 − − 0.35 3.0 Vdc Min Typ Max Unit mA †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 1 March, 2006 − Rev. 0 Publication Order Number: NSR0130/D NSR0130M2T5G 200 IF, FORWARD CURRENT (mA) IR, REVERSE CURRENT (mA) 100 1000 100 10 1.0 0.1 0.01 TA = 25°C TA = 150°C TA = 125°C TA = 85°C 10 1 50°C 1 25°C 1.0 85°C 25°C −40°C −55°C 0.4 0.5 0.6 0.1 0.0 0.1 0.2 0.3 0.001 0 5 10 15 20 25 30 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Forward Voltage Figure 2. Leakage Current 14 CT, TOTAL CAPACITANCE (pF) 12 10 8 6 4 2 0 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Total Capacitance http://onsemi.com 2 NSR0130M2T5G PACKAGE DIMENSIONS SOD−723 CASE 509AA−01 ISSUE O D −X− −Y− E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. MILLIMETERS INCHES MIN NOM MAX MIN NOM MAX 0..


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