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NSR0140M2T5G

ON Semiconductor

Schottky Barrier Diode

www.DataSheet4U.com NSR0140M2T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switc...


ON Semiconductor

NSR0140M2T5G

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Description
www.DataSheet4U.com NSR0140M2T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. Features http://onsemi.com Extremely Fast Switching Speed Extremely Low Forward Voltage − 0.28 V (Typ) @ IF = 1.0 mAdc Low Reverse Current Lead−Free Plating Pb−Free Package is Available 40 V SCHOTTKY BARRIER DIODE 1 CATHODE 2 ANODE 2 MAXIMUM RATINGS Rating Peak Reverse Voltage Reverse Voltage Forward Continuous Current (DC) Peak Forward Surge Current Symbol VRM VR IF IFSM Value 40 30 30 500 Unit V V mA mA 1 SOD−723 CASE 509AA PLASTIC 1 MARKING DIAGRAM 7E MG G 2 ESD Rating: Class 1C per Human Body Model Class A per Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 7E = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package SOD−723 Shipping † 2 mm Pitch 8000/Tape & Reel THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resist...




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