NSR0230M2T5G, NSVR0230M2T5G
Schottky Barrier Diode
These Schottky barrier diodes are designed for high−speed switching ...
NSR0230M2T5G, NSVR0230M2T5G
Schottky Barrier Diode
These
Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited.
Features
Extremely Fast Switching Speed Extremely Low Forward Voltage 0.325 V (max) @ IF = 10 mA Low Reverse Current AEC Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
This is a Pb−Free Device*
MAXIMUM RATINGS
Rating
Symbol Value Unit
Reverse Voltage Forward Current DC Forward Current Surge Peak
(60 Hz, 1 cycle)
VR 30 Vdc
IF 200 mA
IFSM
1.0
A
ESD Rating: Class 3B per Human Body Model Class C per Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS Characteristic
Total Device Dissipation FR−5 Board, (Note 1)
TA = 25C Derate above 25C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range
1. FR−5 Minimum Pad.
Symbol PD
RqJA TJ, Tstg
Max
167 2.0 600 −55 to +125
Unit
mW mW/C C/W
C
http://onsemi.com
30 V
SCHOTTKY BARRIER DIODE
SOD−723 CASE 509AA
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