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STTH200L04TV1

ST Microelectronics

Ultrafast High Voltage Rectifier

www.DataSheet4U.com STTH200L04TV1 Ultrafast high voltage rectifier Mian product characteristics IF(AV) VRRM Tj (max) VF...


ST Microelectronics

STTH200L04TV1

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www.DataSheet4U.com STTH200L04TV1 Ultrafast high voltage rectifier Mian product characteristics IF(AV) VRRM Tj (max) VF (typ) trr (max) up to 2 x 120 A 400 V 150° C 0.83 V 50 ns A1 A2 K1 K2 K1 A1 K2 A2 ISOTOP STTH200L04TV1 Features and benefits ● ● ● ● ● Ultrafast switching Low reverse current Low thermal resistance Reduces switching and conduction losses Package insulation voltage: 2500 VRMS Description The STTH200L04TV1 uses ST 400 V technology and is specially suited for use in switching power supplies, welding equipment, and industrial applications, as an output rectification diode. Table 1. Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Tc = 90° C δ = 0.5 Tc = 73° C δ = 0.5 tp = 10 ms sinusoidal Per diode Per diode Order codes Part number STTH200L04TV1 Marking STTH200L04TV1 Absolute ratings (limiting values, per diode) Parameter Value 400 200 100 A 120 900 -55 to + 150 150 A °C °C Unit V A August 2006 Rev 1 1/7 www.st.com 7 www.DataSheet4U.com Characteristics STTH200L04TV1 1 Characteristics Table 2. Symbol Rth(j-c) Rth(c) Junction to case Total Coupling 0.30 0.10 °C/W Thermal resistance Parameter Per diode Value (max). 0.50 Unit When diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 3. Symbol IR(1) VF(2) Static electric...




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