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DSSK 60-0045B
Power Schottky Rectifier
with common cathode
IFAV = 2x30 A VRRM = 45 V VF = 0.44 V
VRSM V 45
VRRM V 45
Type
A
C
A
TO-247 AD
DSSK 60-0045B
A C A
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
Symbol IFRMS IFAV IFAV IFSM EAS IAR (dv/dt)cr TVJ TVJM Tstg Ptot Md Weight
Conditions TC = 120°C; rectangular, d = 0.5 TC = 120°C; rectangular, d = 0.5; per device TVJ = 45°C; tp = 10 ms (50 Hz), sine IAS = 18 A; L = 180 µH; TVJ = 25°C; non repetitive VA =1.5 • VRRM typ.; f=10 kHz; repetitive
Maximum Ratings 70 30 60 650 46 1.8 1000 -55...+150 150 -55...+150 A A A A mJ A V/µs °C °C °C W Nm g
Features • International standard package • Very low VF • Extremely low switching losses • Low IRM-values • Epoxy meets UL 94V-0
Applications • Rectifiers in switch mode power supplies (SMPS) • Free wheeling diode in low voltage converters
TC = 25°C mounting torque typical
115 0.8...1.2 6
Advantages • High reliability circuit operation • Low voltage peaks for reduced protection circuits • Low noise switching • Low losses
Symbol IR VF
Conditions TVJ = 25°C VR = VRRM TVJ = 100°C VR = VRRM IF = 30 A; IF = 30 A; IF = 60 A; TVJ = 125°C TVJ = 25°C TVJ = 125°C
Characteristic Values typ. max. 20 200 0.44 0.50 0.68 1.1 0.25 mA mA V V V K/W K/W
Dimensions see pages D2 - 87-88
RthJC RthCH
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, Conditions and dimensions.
304
© 2003 IXYS All rights reserved
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DSSK 60-0045B
100 1000 A IR IF 100 125°C
100°C
10000 mA
150°C
pF CT
10
TVJ = 150°C 125°C 25°C
10
75°C
1000
1
50°C
25°C
TVJ= 25°C
1 0.0
0.1 0.2 0.4 0.6 VF 0.8 V 1.0 0 10 20 30 40 V 50 VR
100 0 10 20 30 VR 40 V
Fig. 1 Maximum forward voltage drop characteristics
80 A 70 60 IF(AV) 50 40 30 20 10 0 0 40 80 120 TC 160°C d=0.5 DC
Fig. 2 Typ. value of reverse current IR versus reverse voltage VR
60 W 50 P(AV) 40 30 20 10 0 0 10 20 30 40 50 IF(AV) 60 A
Fig. 3 Typ. junction capacitance CT versus reverse voltage VR
A IFSM
d= DC 0.5 0.33 0.25 0.17 0.08
µs tP
Fig. 4 Average forward current IF(AV) versus case temperature TC
2 1 K/W ZthJC
Fig. 5 Forward power loss characteristics
D=0.5 0.33 0.25 0.17 0.08
0.1
Single Pulse (Thermal Resistance)
0.01 0.0001
DSSK 60-0045B
0.001
0.01
0.1
1 t
s
10
Fig. 6 Transient thermal impedance junction to case at various duty cycles
Note: All curves are per diode
304
© 2003 IXYS All rights reserved
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