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STC08DE150
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT™ 1500 V - 8 A - 0.075 W
PRELIMINARY DATA...
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STC08DE150
HYBRID EMITTER SWITCHED BIPOLAR
TRANSISTOR ESBT™ 1500 V - 8 A - 0.075 W
PRELIMINARY DATA
Table 1: General Features
VCS(ON) 0.6 V
n n n n
Figure 1: Package
RCS(ON) 0.075 W
IC 8A
LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH, UP TO 150 kHz SQUARED RBSOA, UP TO 1500 V VERY LOW CISS DRIVEN BY RG = 47 W
2 3 4
APPLICATION n SINGLE SWITCH SMPS BASED ON THREE PHASE MAINS DESCRIPTION The STC08DE150 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed at providing the best performance in ESBT topology. The STC08DE150 is designed for use in aux flyback smps for any three phase application. TO247-4L
1
Figure 2: Internal Schematic Diagram
Electrical Symbol
Table 2: Order Code
Part Number STC08DE150 Marking C08DE150 Package TO247-4L
Device Structure
Packaging TUBE
January 2005
Rev. 1
1/9
STC08DE150
Table 3: Absolute Maximum Ratings
Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot Tstg TJ Parameter Collector-Source Voltage (VBS = VGS = 0 V) Base-Source Voltage (IC= 0, VGS = 0 V) Source-Base Voltage (IC= 0, VGS = 0 V) Gate-Source Voltage Collector Current Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 1ms) Total Dissipation at TC = 25 oC Storage Temperature Max. Operating Junction Temperature Value 1500 30 9 ± 20 8 15 4 8 155 -65 to 125 125 Unit V V V V A A A A W °C °C
Table 4: Thermal Data
Symbol Rthj-case Parameter Thermal Resistance Junction-Case Ma...
