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NSR0230P2T5G

ON Semiconductor

Schottky Barrier Diode

www.DataSheet4U.com NSR0230P2T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switc...


ON Semiconductor

NSR0230P2T5G

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Description
www.DataSheet4U.com NSR0230P2T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. Features http://onsemi.com Extremely Fast Switching Speed Extremely Low Forward Voltage 0.325 V (max) @ IF = 10 mA Low Reverse Current This is a Pb−Free Device 30 V SCHOTTKY BARRIER DIODE MAXIMUM RATINGS Rating Reverse Voltage Forward Current DC Forward Current Surge Peak (60 Hz, 1 cycle) ESD Rating: Class 3B per Human Body Model ESD Rating: Class C per Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Symbol VR IF IFSM Value 30 200 1.0 Unit Vdc mA 2 A 1 CATHODE 2 ANODE MARKING DIAGRAM 1 K MG G SOD−923 CASE 514AA PLASTIC 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range 1. FR−5 Minimum Pad. Symbol PD Max 200 2.0 RqJA TJ, Tstg 600 −55 to +125 Unit mW mW/°C °C/W °C K = Specific Device Code M = Month Code G = Pb−Free Package (Note: Mi...




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