HY29DL162

www.DataSheet4U.com HY29DL162/HY29DL163 16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 2.7 to 3.6 V − Ideal for battery-powered applications Simultaneous Read/Write Operations − Host system can program or erase in one bank while simultaneously reading from any sector in the other bank with zero latency between read and write operations High Performance − 70 and 80 ns access time versions with 30pF load − 90 and 120 ns access time versions with 100pF load Ultra Low Power Consumption (Typical Values) − Automatic sleep mode current: 200 nA − Standby mode current: 200 nA − Read current: 10 mA (at 5 MHz) − Program/erase current: 15 mA Boot-Block Sector Architecture with 39 Sectors in Two Banks for Fast In-System Code Changes Secured Sector: An Extra 64 Kbyte Sector that Can Be: − Factory locked and identifiable: 16 bytes available for a secure, random factoryprogrammed Electronic Serial Number − Customer lockable: Can be read, programmed, or erased just like other sectors Flexible Sector Architecture − Sector Protection allows locking of a sector or sectors to prevent program or erase operations within that sector − Temporary Sector Unprotect allows changes in locked sectors (requires high voltage on RESET# pin) Automatic Erase Algorithm Erases Any Combination of Sectors or the Entire Chip Automatic Program Algorithm Writes...