(HY29DS162 / HY29DS163) Simultaneous Read/Write Flash Memory
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HY29DS162/HY29DS163
16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Wri...
Description
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HY29DS162/HY29DS163
16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory
KEY FEATURES
n Single Power Supply Operation
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− Read, program, and erase operations from 1.8 to 2.2 V (2.0V ± 10%) − Ideal for battery-powered applications Simultaneous Read/Write Operations − Host system can program or erase in one bank while simultaneously reading from any sector in the other bank with zero latency between read and write operations High Performance − 120 and 130 ns access time versions with ± 10% power supply and 30pF load Ultra Low Power Consumption (Typical Values) − Automatic sleep mode current: 200 nA − Standby mode current: 200 nA − Read current: 5 mA (at 5 MHz) − Program/erase current: 15 mA Boot-Block Sector Architecture with 39 Sectors in Two Banks for Fast In-System Code Changes Secured Sector: An Extra 64 Kbyte Sector that Can Be: − Factory locked and identifiable: 16 bytes available for a secure, random factoryprogrammed Electronic Serial Number − Customer lockable: Can be read, programmed, or erased just like other sectors Flexible Sector Architecture − Sector Protection allows locking of a sector or sectors to prevent program or erase operations within that sector − Temporary Sector Unprotect allows changes in locked sectors (requires high voltage on RESET# pin) Automatic Erase Algorithm Erases Any Combination of Sectors or the Entire Chip Automatic Program Algorithm Writes and Veri...
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