HY29DS323

www.DataSheet4U.com HY29DS322/HY29DS323 32 Megabit (4M x 8/2M x16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 1.8 to 2.2 V (2.0V ± 10%) − Ideal for battery-powered applications Simultaneous Read/Write Operations − Host system can program or erase in one bank while simultaneously reading from any sector in the other bank with zero latency between read and write operations High Performance − 100, 110 and 120 ns access time versions Ultra Low Power Consumption (Typical Values) − Automatic sleep mode current: 5 µA − Standby mode current: 5 µA − Read current: 5 mA (at 5 MHz) − Program/erase current: 20 mA Boot-Block Sector Architecture with 71 Sectors in Two Banks for Fast In-System Code Changes Secured Sector: An Extra 64 Kbyte Sector that Can Be: − Factory locked and identifiable: 16 bytes available for a secure, random factory Electronic Serial Number − Customer lockable: Can be read, programmed, or erased just like other sectors Flexible Sector Architecture − Sector Protection allows locking of a sector or sectors to prevent program or erase operations within that sector − Temporary Sector Unprotect allows changes in locked sectors (requires high voltage on RESET# pin) Automatic Erase Algorithm Erases Any Combination of Sectors or the Entire Chip Automatic Program Algorithm Writes and Verifies Data at Specified Addresses Compliant with ...