HY62LF16206B-DT12C

www.DataSheet4U.com HY62LF16206B-DT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5V Low Low Power Full CMOS Slow SRAM Revision History Revision No 00 History Initial Draft Date Apr. 6. 2003 Remark Final This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.00 /Apr. 2003 Hynix Semiconductor HY62LF16206B-DT12C 128Kx16bit full CMOS SRAM DESCRIPTION The HY62LF16206B is a high speed, super low power and 2Mbit full CMOS SRAM organized as 128K words by 16bits. The HY62LF16206B uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V. Product Voltage No. (V) HY62LF16206B 2.3~2.7 Notes : 1. Current value is max. Speed (ns) 120 FEATURES Fully static operation and Tri-state output TTL compatible inputs and outputs Battery backup(L-part) -. 1.2V(min) data retention Standard pin configuration -. 48-TSOP1 Operation Current/Icc(mA) 1 Standby Current(uA) D 20 Temperature (°C) 0~70 PIN CONNECTION A15 A14 A13 A12 A11 A10 A9 A8 NC NC /WE CS2 NC /UB /LB NC NC A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 4...