256Kx16bit full CMOS SRAM
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HY62LF16404C Series
256Kx16bit full CMOS SRAM
Document Title
256K x16 bit 2.3 ~ 3.0V Super Low Pow...
Description
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HY62LF16404C Series
256Kx16bit full CMOS SRAM
Document Title
256K x16 bit 2.3 ~ 3.0V Super Low Power FCMOS Slow SRAM
Revision History
Revision No 00 01 History Initial Draft Part No Change 100ns Part Delete Marking Information add tBLZ / tOLZ value is changed Icc1 value is changed Output Load is redefined Isb, Isb1, Vdr, Iccdr are redefined Changed Logo Changed Isb1 values Changed part No Q -> L Draft Date Jul.06.2000 Oct.30.2000 Remark Preliminary Preliminary
02
Dec.20.2000
Final
03 04
Mar.23.2001 Jun.07.2001
Final Final
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.04 / Jun.01 Hynix Semiconductor
HY62LF16404C Series
DESCRIPTION
The HY62LF16404C is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62LF16404C uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V.
FEATURES
Fully static operation and Tri-state output TTL compatible inputs and outputs Battery backup -. 1.2V(min) data retention Standard pin configuration -. 48-ball uBGA
Product No.
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