HY62LF16404D

www.DataSheet4U.com HY62LF16404D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.3 ~ 2.7V Super Low Power FCMOS Slow SRAM Revision History Revision No 00 01 02 History Initial Draft Changed Logo Changed Isb1 values Changed part No Q -> L Changed Package Size (6.1mm -> 6.0mm) Draft Date Dec.20.2000 Mar.23.2001 Jun.07.2001 Remark Preliminary Preliminary Preliminary 03 Aug.07.2001 Preliminary This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.03 / Aug.01 Hynix Semiconductor HY62LF16404D Series Preliminary DESCRIPTION The HY62LF16404D is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62LF16404D uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.5V. FEATURES Fully static operation and Tri-state output TTL compatible inputs and outputs Battery backup -. 1.5V(min) data retention Standard pin configuration -. 48-ball FBGA Product No. Voltage (V) Speed (ns) Operation Current/Icc(mA) 3 HY62LF16404D-I 2.3~2.7 70/85 Note 1. Blank : Commercial, I : Industrial 2. Current value is max. Standby ...