HY62LF16806B

www.DataSheet4U.com HY62LF16806B Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 2.5V Super Low Power Full CMOS slow SRAM Revision History Revision No 00 History Initial Draft Draft Date May.29.2001 Remark Preliminary This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.00 /May. 2001 Hynix Semiconductor HY62LF16806B Series Preliminary DESCRIPTION The HY62LF16806B is a high speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits. The HY62LF16806B uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly wellsuited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V. Product Voltage Speed No. (V) (ns) HY62LF16806B-C 2.3~2.7 70/85/100 HY62LF16806B- I 2.3~2.7 70/85/100 Note 1. C : Commercial, I : Industrial 2. Current value is max. FEATURES Fully static operation and Tri-state output TTL compatible inputs and outputs Battery backup(LL/SL-part) - 1.2V(min) data retention Standard pin configuration - 48-FBGA Operation Current/Icc(mA) 3 3 Standby Current(uA) LL SL 20 8 20 8 Temperature (°C) 0~70 -45~85 PIN CONNECTION ( Top View ) 1 2 /OE /UB 3 A0 A3 4 A1 A4 A6 A7 A16 A15 A13 ...