HY62UF16804B

www.DataSheet4U.com HY62UF16804B Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 3.0V Super Low Power Full CMOS slow SRAM Revision History Revision No 00 01 History Initial Release DC Para Change Icc 4mA à Icc1(Min) 40mA à Icc1(1us) 8mA à Isb 0.1mA à Isb1 25uA à Iccdr 12uA à Draft Date May.29.2001 Mar.20.2002 3mA 20mA 2mA 0.3mA 15uA 6uA Remark Preliminary This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.01 /Mar.2002 Hynix Semiconductor HY62UF16804B Preliminary DESCRIPTION The HY62UF16804B is a high speed, super low power and 8Mbit full CMOS SRAM organized as 512K words by 16bits. The HY62UF16804B uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V. Product Voltage Speed No. (V) (ns) HY62UF16804B-C 2.7~3.3 55/70/85 HY62UF16804B-I 2.7~3.3 55/70/85 Note 1. C : Commercial, I : Industrial 2. Current value is max. FEATURES Fully static operation and Tri-state output TTL compatible inputs and outputs Battery backup(LL/SL-part) - 1.2V(min) data retention Standard pin configuration - 48-fBGA Operation Current/Icc(mA) 3 3 Standby Curren...