HY62UF16806A

www.DataSheet4U.com HY62UF16806A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 3.0V Super Low Power Full CMOS slow SRAM Revision History Revision No 00 01 History Initial Draft Change Logo - Hyundai à Hynix Change DC Parameter - Isb1(LL) : 40uA à - Isb1(Typ) : 8uA à - Icc : 5mA à - Icc1(1us) : 8mA à - Icc1(Min) : 50mA à Change Data Retention - IccDR(LL) : 25uA à Change AC Parameter - tOE : 35ns à : 40ns à - tCW : 50ns à - tAW : 50ns à - tBW : 50ns à - tWP : 45ns à - tCHZ : 30ns à - tOHZ : 30ns à - tBHZ : 30ns à 25uA 1uA 4mA 4mA 40mA 15uA 25ns@55ns 35ns@70ns 45ns@55ns 45ns@55ns 45ns@55ns 45ns@55ns 20ns@55ns , 30ns à 25ns@70ns 20ns@55ns , 30ns à 25ns@70ns 20ns@55ns , 30ns à 25ns@70ns Mar.15.2002 Draft Date Feb.21.2001 Apr.28.2001 Remark Preliminary 02 Jan.28.2002 03 Change DC Parameter - Icc1(Min) : 40mA à 35mA This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.03 /Mar. 2002 Hynix Semiconductor HY62UF16806A DESCRIPTION The HY62UF16806A is a high speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits. The HY62UF16806A uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly wellsuited for the high density low power system application. This device has a data retention mode that guarantees ...